Carl John Frosch (September 6, 1908 – May 18, 1984) was a Bell Labs researcher who along Lincoln Derick build the first silicon dioxide field effect transistors...

Frosch is a German surname. Notable people with the surname include: Carl Frosch, Bell Labs researcher Leslie Frosch, American curler Reinhold Frosch...

methods of producing atomically clean semiconductor surfaces. In 1955, Carl Frosch and Lincoln Derrick accidentally covered the surface of silicon wafer...

the crystal, was first discovered by Carl Frosch and Lincoln Derrick at Bell Labs between 1955 and 1957. Frosch and Derrick showed that a silicon dioxide...

dioxide surface passivation by Carl Frosch and Lincoln Derick in 1955, the first planar silicon dioxide transistors by Frosch and Derick in 1957, the MOSFET...

US2802760A, Lincoln, Derick & Frosch, Carl J., "Oxidation of semiconductive surfaces for controlled diffusion", issued 1957-08-13  Frosch, C. J.; Derick, L (1957)...

concentration. In early 1955, Carl Frosch from Bell Labs developed wet oxidation of silicon, and in the next two years, Frosch, Moll, Fuller and Holonyak...

junction isolation by Kurt Lehovec. Hoerni's invention was built on Carl Frosch and Lincoln Derick's work on surface protection and passivation by silicon...

US2802760A, Lincoln, Derick & Frosch, Carl J., "Oxidation of semiconductive surfaces for controlled diffusion", issued 1957-08-13  Frosch, C. J.; Derick, L (1957)...

method developed at Bell Labs by Carl Frosch and Lincoln Derick in 1955 and 1957. At Bell Labs, the importance of Frosch and Derick technique and transistors...

US2802760A, Lincoln, Derick & Frosch, Carl J., "Oxidation of semiconductive surfaces for controlled diffusion", issued 1957-08-13  Frosch, C. J.; Derick, L (1957)...

dioxide surface passivation by Carl Frosch and Lincoln Derick, the first planar silicon dioxide transistors by Frosch and Derick in 1957, planar process...

proven by Ulick Richardson Evans only in 1927. Between 1955 and 1957, Carl Frosch and Lincoln Derrick discovered surface passivation of silicon wafers...

compact space. In 1955, Carl Frosch and Lincoln Derick discovered silicon dioxide surface passivation effects. In 1957 Frosch and Derick, using masking...

were only able to build the BJT and thyristor transistors. In 1955, Carl Frosch and Lincoln Derick accidentally grew a layer of silicon dioxide over...

Jean Hoerni in early 1959. In turn, the planar process was based on Carl Frosch and Lincoln Derick work on semiconductor surface passivation by silicon...

1955, Carl Frosch and Lincoln Derick at Bell Labs accidentally discovered that silicon dioxide (SiO 2) could be grown on silicon. By 1957 Frosch and Derick...

composite fermions and Non Abelian Chern–Simons Lagrangians. In 1957, Carl Frosch and Lincoln Derick were able to manufacture the first silicon dioxide...

silicon surface passivation and thermal oxidation processes developed by Carl Frosch and Lincoln Derrick in 1955 and 1957. Computers using IC chips began...

Frank Wanlass was familiar with work done by Weimer at RCA. In 1955, Carl Frosch and Lincoln Derick accidentally grew a layer of silicon dioxide over...

US2802760A, Lincoln, Derick & Frosch, Carl J., "Oxidation of semiconductive surfaces for controlled diffusion", issued 1957-08-13  Frosch, C. J.; Derick, L (1957)...

US2802760A, Lincoln, Derick & Frosch, Carl J., "Oxidation of semiconductive surfaces for controlled diffusion", issued 1957-08-13  Frosch, C. J.; Derick, L (1957)...

GlobalFoundries' 12 and 14 nm processes have similar feature sizes. In 1955, Carl Frosch and Lincoln Derick, working at Bell Telephone Laboratories, accidentally...

Semiconductor corporation. In 1955 Carl Frosch and Lincoln Derrick discovered and patented surface passivation by silicon dioxide. Frosch and Derrick were able to...

US2802760A, Lincoln, Derick & Frosch, Carl J., "Oxidation of semiconductive surfaces for controlled diffusion", issued 1957-08-13  Frosch, C. J.; Derick, L (1957)...

invented by Robert Noyce at Fairchild Semiconductor in 1959. In 1955, Carl Frosch and Lincoln Derick accidentally grew a layer of silicon dioxide over...

but there was no working practical FET built at the time. In 1955, Carl Frosch and Lincoln Derrick accidentally grew a layer of silicon dioxide over...

which would allow higher capacitance with the same thickness. In 1955, Carl Frosch and Lincoln Derrick accidentally grew a layer of silicon dioxide over...

In 1955 Carl Frosch and Lincoln Derrick accidentally grew an oxide layer over silicon at Bell Labs and patented their method. By 1957 Frosch and Derrick...

an espionage comedy." Jon Frosch of The Hollywood Reporter called it "Stale as week-old bread and every bit as bland". Frosch was positive about the cast...