Epitaxy (prefix epi- means "on top of”) refers to a type of crystal growth or material deposition in which new crystalline layers are formed with one...
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Molecular-beam epitaxy (MBE) is an epitaxy method for thin-film deposition of single crystals. MBE is widely used in the manufacture of semiconductor...
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Metalorganic vapour-phase epitaxy (MOVPE), also known as organometallic vapour-phase epitaxy (OMVPE) or metalorganic chemical vapour deposition (MOCVD)...
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Hydride vapour-phase epitaxy (HVPE) is an epitaxial growth technique often employed to produce semiconductors such as GaN, GaAs, InP and their related...
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Chemical beam epitaxy (CBE) forms an important class of deposition techniques for semiconductor layer systems, especially III-V semiconductor systems...
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fabrication plants. ASM's technologies include atomic layer deposition, epitaxy, chemical vapor deposition and diffusion. The company was founded by Arthur...
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Thermal laser epitaxy (TLE) is a physical vapor deposition technique that utilizes irradiation from continuous-wave lasers to heat sources locally for...
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Atomic layer epitaxy (ALE), more generally known as atomic layer deposition (ALD), is a specialized form of thin film growth (epitaxy) that typically deposit...
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Selective area epitaxy is the local growth of epitaxial layer through a patterned amorphous dielectric mask (typically SiO2 or Si3N4) deposited on a semiconductor...
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epiwafer) is a wafer of semiconducting material made by epitaxial growth (epitaxy) for use in photonics, microelectronics, spintronics, or photovoltaics...
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Bridgman–Stockbarger method Van Arkel–de Boer process Czochralski method Epitaxy Flux method Fractional crystallization Fractional freezing Hydrothermal synthesis...
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(ALD) Physical vapor deposition (PVD) Sputtering Evaporation Epitaxy Molecular beam epitaxy (MBE) Ion beam deposition Plasma ashing (for complete photoresist...
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The Center for Advanced Materials, formerly the Space Vacuum Epitaxy Center, is a laboratory established in 1986 at the University of Houston for researching...
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high-brightness LEDs used a thin film of GaN deposited via metalorganic vapour-phase epitaxy (MOVPE) on sapphire. Other substrates used are zinc oxide, with lattice...
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Graphene production techniques (section Epitaxy)
commonly referred to as epitaxy) or epitaxial layer deposition on a sapphire (Heteroepitaxy). A special method in CVD, called Epitaxy or Epitaxial Layer Deposition...
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include: Molecular-beam epitaxy (MBE) Hydride vapor-phase epitaxy (HVPE) Liquid phase epitaxy (LPE) Metal-organic molecular-beam epitaxy (MOMBE) Atomic layer...
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Community complex. In 1968, molecular beam epitaxy was developed by J.R. Arthur and A.Y. Cho; molecular beam epitaxy allows semiconductor chips and laser matrices...
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Bridgman–Stockbarger method Van Arkel–de Boer process Czochralski method Epitaxy Flux method Fractional crystallization Fractional freezing Hydrothermal synthesis...
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zinc blende and wurtzite structures can be prepared by molecular beam epitaxy. The chemical properties of MgS resemble those of related ionic sulfides...
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Gd3Ga2(GaO4)3 which is synthesized for use as a substrate for liquid-phase epitaxy of magnetic garnet films for bubble memory and magneto-optical applications...
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Vesborg, Peter C. K. (11 September 2023). "Laser-Annealing and Solid-Phase Epitaxy of Selenium Thin-Film Solar Cells". ACS Applied Energy Materials. 6 (17):...
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Bridgman–Stockbarger method Van Arkel–de Boer process Czochralski method Epitaxy Flux method Fractional crystallization Fractional freezing Hydrothermal synthesis...
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Beam Epitaxy Research Group. 2014-08-19. Retrieved 2019-08-14. Johnson, Shane (May 1998). "In situ temperature control of molecular beam epitaxy growth...
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satellite power applications, are made by molecular-beam epitaxy or metalorganic vapour-phase epitaxy of thin films of gallium arsenide, indium gallium phosphide...
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from hydrogen. Hydrogen purifiers are used in metalorganic vapour phase epitaxy reactors for LED production. Fuel cell electric vehicles commonly use polymer...
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Several have been examined such as precursors for metalorganic vapor phase epitaxy growth of II-VI compound semiconductors. These precursor compounds include...
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D. K; Gupta, G (2022). "van der Waals Epitaxy of Transition Metal Dichalcogenides via Molecular Beam Epitaxy: Looking Back and Moving Forward". Materials...
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Graphene nanoribbon (section Epitaxy)
Graphene nanoribbons (GNRs, also called nano-graphene ribbons or nano-graphite ribbons) are strips of graphene with width less than 100 nm. Graphene ribbons...
44 KB (4,988 words) - 08:06, 26 June 2024