the term high-κ dielectric refers to a material with a high dielectric constant (κ, kappa), as compared to silicon dioxide. High-κ dielectrics are used...
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manufacturing, a low-κ is a material with a small relative dielectric constant (κ, kappa) relative to silicon dioxide. Low-κ dielectric material implementation...
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45 nm process (section High-κ dielectric)
have high-κ dielectric and metal gate solutions, which Intel considers to be a fundamental change in transistor design. NEC has also put high-κ materials...
14 KB (1,395 words) - 00:52, 28 February 2024
Relative permittivity (redirect from Dielectric Constant)
real-value. Curie temperature Dielectric spectroscopy Dielectric strength Electret Ferroelectricity Green–Kubo relations High-κ dielectric Kramers–Kronig relation...
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Dielectric absorption Dielectric losses Dielectric strength Dielectric spectroscopy EIA Class 1 dielectric EIA Class 2 dielectric High-κ dielectric Low-κ...
37 KB (4,758 words) - 12:27, 4 October 2024
the increase in power consumption due to gate current leakage, a high-κ dielectric is used instead of silicon dioxide for the gate insulator, while polysilicon...
98 KB (11,849 words) - 22:59, 3 December 2024
Hafnium(IV) oxide (category High-κ dielectrics)
than hafnium oxide. Hafnia is used in optical coatings, and as a high-κ dielectric in DRAM capacitors and in advanced metal–oxide–semiconductor devices...
9 KB (851 words) - 11:28, 8 October 2024
Zirconium dioxide (category High-κ dielectrics)
precursor to the electroceramic lead zirconate titanate (PZT), which is a high-κ dielectric, which is found in myriad components. The very low thermal conductivity...
21 KB (2,070 words) - 17:05, 25 October 2024
polysilicon. Other metal gates have made a comeback with the advent of high-κ dielectric materials in the CMOS process, as announced by IBM and Intel for the...
57 KB (6,501 words) - 02:50, 18 December 2024
Chemical vapor deposition (redirect from Ultra-High Vacuum CVD)
fluorocarbons, filaments, tungsten, titanium nitride and various high-κ dielectrics. The term chemical vapour deposition was coined in 1960 by John M...
42 KB (5,006 words) - 15:45, 8 December 2024
of 2007, some manufacturers are replacing this oxide with various high-κ dielectric materials which may or may not be oxides, but the effect is still...
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ALD is substantially more mature, having been used by Intel for high-κ dielectric layers since 2007 and in Finland in the fabrication of thin film electroluminescent...
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Zirconium(IV) silicate (category High-κ dielectrics)
by chemical vapor deposition, most often MOCVD, can be used as a high-k dielectric as a replacement for silicon dioxide in semiconductors. Zirconium...
6 KB (506 words) - 20:06, 2 November 2024
Permittivity (redirect from Dielectric function)
(epsilon), is a measure of the electric polarizability of a dielectric material. A material with high permittivity polarizes more in response to an applied...
34 KB (4,420 words) - 00:08, 5 December 2024
Tantalum pentoxide (category High-κ dielectrics)
Wang, X; et al. (2004). "A Novel MONOS-Type Nonvolatile Memory Using High-κ Dielectrics for Improved Data Retention and Programming Speed". IEEE Transactions...
24 KB (2,450 words) - 17:45, 16 August 2024
dielectric pad, while achieving the same capacitance and high performance. In other words silicon oxide film of one-tenth the thickness of the high-κ...
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Titanium oxide (category High-κ dielectrics)
Ti5O9 are non-stoichiometric oxides. These compounds are typically formed at high temperatures in the presence of excess oxygen. As a result, they exhibit...
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Leakage (electronics) (redirect from Dielectric leakage)
Efforts to minimize leakage include the use of strained silicon, high-κ dielectrics, and/or stronger dopant levels in the semiconductor. Leakage reduction...
8 KB (999 words) - 15:04, 28 September 2023
Hafnium(IV) silicate (category High-κ dielectrics)
deposition, chemical vapor deposition or MOCVD, can be used as a high-k dielectric as a replacement for silicon dioxide in modern semiconductor devices...
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first adopted in 2015. Gate-last consisted of first depositing the High-κ dielectric, creating dummy gates, manufacturing sources and drains by ion deposition...
110 KB (11,625 words) - 23:02, 12 December 2024
focused ultrasound High-κ dielectric High-lift device High-refractive-index polymer High-resolution scheme High-temperature electrolysis High-temperature superconductivity...
17 KB (1,815 words) - 15:35, 11 July 2022
Three-dimensional integrated circuit Semiconductor device Clock gating High-κ dielectric Next-generation lithography Extreme ultraviolet lithography Immersion...
40 KB (4,186 words) - 15:03, 18 November 2024
will vary depending on the dielectric material and the frequency of the electrical signals. In low dielectric constant (low-κ), temperature compensating...
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Dina H. Triyoso is an American materials scientist, and an expert on high-κ dielectrics and their applications in semiconductor-based electronics, and more...
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World Economic Forum Young Scientist A transparent, self-healing and high-κ dielectric for low-field-emission stretchable optoelectronics, YJ Tan, H. Godaba...
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is δp = 1/α = λ0/4πκ. Both n and κ are dependent on the frequency. In most circumstances κ > 0 (light is absorbed) or κ = 0 (light travels forever without...
78 KB (8,750 words) - 03:28, 21 December 2024
ignored (help) Sanghun Jeon; et al. (December 2005). "High work-function metal gate and high-κ dielectrics for charge trap flash memory device applications"...
34 KB (4,562 words) - 17:41, 21 September 2024
due to the tunneling effect. From this reason, the use of so-called high-κ dielectrics as the insulator material is being investigated. In the MOSFET R&D...
3 KB (400 words) - 20:30, 11 September 2023
30 nm (high-performance) to 50 nm (low-power) Core voltage: 1.0 V 11 Cu interconnect layers using nano-clustering silica as ultralow κ dielectric (κ=2.25)...
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devices, and nanostructured materials. This includes efforts to develop high-κ dielectric, oxide-based films, e.g. HfO2, HfSiO4, ZrO2, for electronic devices...
7 KB (594 words) - 17:35, 21 November 2024