Insulated-gate bipolar transistor (redirect from IGBT)
An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily forming an electronic switch. It was developed to...
34 KB (3,924 words) - 19:10, 20 June 2024
total weight: 132 t. WAG-9i: Version with IGBT Technology. WAG-9Hi: Version with additional ballast and IGBT Technology. WAG-9HC: Heavy version with brake...
17 KB (1,248 words) - 07:46, 14 July 2024
six decades. Introduced in 1983, the insulated-gate bipolar transistor (IGBT) has in the past two decades come to dominate VFDs as an inverter switching...
65 KB (6,828 words) - 08:55, 26 June 2024
HVDC world until the late 20th century, when the IGBT began to match its power ratings. With the IGBT, the first voltage-sourced converters and STATCOMs...
35 KB (4,405 words) - 12:55, 11 July 2024
1 kW to 10 MW, including chips, discrete diodes/thyristors, power modules (IGBT/MOSFET/diode / thyristor/CIB/IPM), driver and protection components and integrated...
7 KB (690 words) - 20:02, 15 July 2024
limited to low voltage applications. The Insulated-gate bipolar transistor (IGBT) was developed in the 1980s, and became widely available in the 1990s. This...
31 KB (3,156 words) - 00:03, 22 February 2024
of August 2007[update], EMD and DLW have begun building GT46ACe's using IGBT technology to replace the older gate turn-off thyristor technology and along...
9 KB (455 words) - 11:36, 2 July 2024
IGBT inverters. Delivered January to March 2005. 8-car sets x 2: 1041, 1049 4-car sets x 2: 1417, 1421 Initially built with Siemens-manufactured IGBT-VVVF...
45 KB (4,259 words) - 15:31, 30 May 2024
Besides modules that contain a single power electronic switch (as MOSFET, IGBT, BJT, Thyristor, GTO or JFET) or diode, classical power modules contain multiple...
8 KB (941 words) - 15:44, 21 March 2024
The Liebherr T 282 series are off-highway, ultra class, rigid frame, two axle, diesel-electric, AC powertrain haul trucks designed and manufactured in...
16 KB (1,641 words) - 15:08, 11 June 2024
An N-MOSFET/IGBT needs a significantly positive charge (VGS > Vth) applied to the gate in order to turn on. Using only N-channel MOSFET/IGBT devices is...
9 KB (1,239 words) - 18:57, 2 June 2024
311–37~311–41, 311–48~311–65 and all 3rd and 4th generation trains use IGBT controls with passive cooling through heat piping. Power output on the Class...
24 KB (3,172 words) - 07:39, 15 July 2024
transistor (IGBT) is a power transistor with characteristics of both a MOSFET and bipolar junction transistor (BJT). As of 2010[update], the IGBT is the second...
174 KB (14,390 words) - 00:53, 28 May 2024
high-current drive input for the gate of a high-power transistor such as an IGBT or power MOSFET. Gate drivers can be provided either on-chip or as a discrete...
6 KB (867 words) - 06:58, 3 August 2022
power semiconductor devices — diodes and thyristors, power assemblies and IGBT modules. The company is located in Orel and is one of the largest companies...
7 KB (629 words) - 19:49, 9 August 2022
developments such as mercury-arc valves (now also obsolete), thyristors, and IGBT power transistors. Converter technology: Thury = Series-connected generators...
175 KB (5,258 words) - 08:09, 26 June 2024
three-phase power supplies, houses three n–p–n IGBTs in a case measuring 38 by 140 by 190 mm and weighing 1.5 kg. Each IGBT is rated at 1,700 volts and can handle...
95 KB (9,900 words) - 01:03, 1 July 2024
(FinFET) Floating-gate MOSFET (FGMOS) Insulated-gate bipolar transistor (IGBT) ISFET LDMOS MOS field-effect transistor (MOSFET) Multi-gate field-effect...
123 KB (15,219 words) - 18:58, 11 July 2024
(FinFET) Floating-gate MOSFET (FGMOS) Insulated-gate bipolar transistor (IGBT) ISFET LDMOS MOS field-effect transistor (MOSFET) Multi-gate field-effect...
100 KB (11,315 words) - 06:42, 15 July 2024
in 1997, use transistors, usually the Insulated-gate bipolar transistor (IGBT). As of 2012, both the line-commutated and voltage-source technologies are...
45 KB (5,854 words) - 02:42, 20 June 2024
(FinFET) Floating-gate MOSFET (FGMOS) Insulated-gate bipolar transistor (IGBT) ISFET LDMOS MOS field-effect transistor (MOSFET) Multi-gate field-effect...
57 KB (6,114 words) - 14:42, 4 July 2024
"360" codes word "EGO" in leet. "1687" or "1987" can be used to hint to IGBTs, e.g. insulated-gate bipolar transistors. "2007 2008" deciphers as "qoot...
35 KB (3,710 words) - 21:09, 13 July 2024
(FinFET) Floating-gate MOSFET (FGMOS) Insulated-gate bipolar transistor (IGBT) ISFET LDMOS MOS field-effect transistor (MOSFET) Multi-gate field-effect...
29 KB (3,824 words) - 06:24, 11 July 2024
(FinFET) Floating-gate MOSFET (FGMOS) Insulated-gate bipolar transistor (IGBT) ISFET LDMOS MOS field-effect transistor (MOSFET) Multi-gate field-effect...
54 KB (6,229 words) - 13:19, 9 July 2024
Centre of Excellence for Hydro Machines at Bhopal; Power Electronics and IGBT & Controller Technology at Electronics Division, Bengaluru, and Advanced...
31 KB (2,945 words) - 06:39, 8 June 2024
(FinFET) Floating-gate MOSFET (FGMOS) Insulated-gate bipolar transistor (IGBT) ISFET LDMOS MOS field-effect transistor (MOSFET) Multi-gate field-effect...
82 KB (8,828 words) - 12:27, 9 July 2024
(FinFET) Floating-gate MOSFET (FGMOS) Insulated-gate bipolar transistor (IGBT) ISFET LDMOS MOS field-effect transistor (MOSFET) Multi-gate field-effect...
61 KB (6,989 words) - 05:53, 10 July 2024
(FinFET) Floating-gate MOSFET (FGMOS) Insulated-gate bipolar transistor (IGBT) ISFET LDMOS MOS field-effect transistor (MOSFET) Multi-gate field-effect...
86 KB (10,942 words) - 15:35, 14 July 2024
transistor (IGBT) or a thyristor, its main advantages are high switching speed and good efficiency at low voltages. It shares with the IGBT an isolated...
39 KB (4,859 words) - 01:20, 5 June 2024
(FinFET) Floating-gate MOSFET (FGMOS) Insulated-gate bipolar transistor (IGBT) ISFET LDMOS MOS field-effect transistor (MOSFET) Multi-gate field-effect...
83 KB (9,179 words) - 10:42, 7 July 2024