Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a zinc blende crystal structure. Gallium arsenide is used in the manufacture of...
46 KB (5,183 words) - 09:13, 2 May 2024
of 37.0 °C (98.6 °F). Gallium is predominantly used in electronics. Gallium arsenide, the primary chemical compound of gallium in electronics, is used...
74 KB (8,761 words) - 13:06, 13 August 2024
Aluminium gallium arsenide (also gallium aluminium arsenide) (AlxGa1−xAs) is a semiconductor material with very nearly the same lattice constant as GaAs...
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Indium gallium arsenide (InGaAs) (alternatively gallium indium arsenide, GaInAs) is a ternary alloy (chemical compound) of indium arsenide (InAs) and...
30 KB (3,798 words) - 09:19, 2 May 2024
Gallium arsenide phosphide (GaAs1−xPx) is a semiconductor material, an alloy of gallium arsenide and gallium phosphide. It exists in various composition...
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at much higher temperatures and work at much higher voltages than gallium arsenide (GaAs) transistors, they make ideal power amplifiers at microwave frequencies...
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Solar cell (section Gallium arsenide thin film)
solar cells based on monolithic, series connected, gallium indium phosphide (GaInP), gallium arsenide (GaAs), and germanium (Ge) p–n junctions, are increasing...
150 KB (17,048 words) - 18:24, 10 August 2024
between different semiconductor materials) of aluminium gallium arsenide (AlGaAs)-gallium arsenide (GaAs) which has twice the electron mobility of a GaAs-metal...
95 KB (9,899 words) - 05:04, 4 August 2024
Indium gallium arsenide phosphide (GaxIn1−xAsyP1−y) is a quaternary compound semiconductor material, an alloy of gallium arsenide, gallium phosphide,...
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crystals with a melting point of 942 °C. Indium arsenide is similar in properties to gallium arsenide and is a direct bandgap material, with a bandgap...
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Multi-junction solar cell (redirect from Gallium arsenide germanium solar cell)
junction cells consisting of indium gallium phosphide (InGaP), gallium arsenide (GaAs) or indium gallium arsenide (InGaAs) and germanium (Ge) can be fabricated...
61 KB (8,208 words) - 17:15, 22 July 2024
devices. It is also a component of the III–V compound semiconductor gallium arsenide. Arsenic and its compounds, especially the trioxide, are used in the...
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Thin-film solar cell (section Gallium arsenide)
silicon (a-Si), cadmium telluride (CdTe), copper indium gallium selenide (CIGS), or gallium arsenide (GaAs). Solar cells made with newer, less established...
127 KB (14,324 words) - 16:56, 14 July 2024
Gallium arsenide antimonide, also known as gallium antimonide arsenide or GaAsSb (GaAs(1-x)Sbx), is a ternary III-V semiconductor compound; x indicates...
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germanium, gallium arsenide, and elements near the so-called "metalloid staircase" on the periodic table. After silicon, gallium arsenide is the second-most...
46 KB (5,379 words) - 00:26, 3 August 2024
limit for efficiency of the GaSb cell in this setup is 52%. Indium gallium arsenide antimonide (InGaAsSb) is a compound III-V semiconductor. (InxGa1−xAsySb1−y)...
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phononic crystal. Aluminium gallium arsenide Boron nitride Indium gallium arsenide Indium arsenide Gallium arsenide Gallium nitride Germanium Metallic...
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creates the critical direct bandgap property. Gallium arsenide, indium phosphide, gallium antimonide, and gallium nitride are all examples of compound semiconductor...
51 KB (6,397 words) - 13:38, 6 August 2024
Aluminium arsenide (AlAs) is a semiconductor material with almost the same lattice constant as gallium arsenide and aluminium gallium arsenide and wider...
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semiconductors have both advantages and disadvantages. For example, gallium arsenide (GaAs) has six times higher electron mobility than silicon, which allows...
54 KB (2,517 words) - 15:26, 2 August 2024
diodes are made of silicon, but other semiconducting materials such as gallium arsenide and germanium are also used. The obsolete thermionic diode is a vacuum...
63 KB (7,282 words) - 20:12, 14 August 2024
include silicon, gallium arsenide, and indium phosphide, while silicon / silicon-germanium alloys, aluminum gallium arsenide / gallium arsenide, and indium...
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velocity with respect to the more common semiconductors silicon and gallium arsenide. It is used mainly in HEMT and HBT structures, but also for the fabrication...
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obtain single crystals of semiconductors (e.g. silicon, germanium and gallium arsenide), metals (e.g. palladium, platinum, silver, gold), salts and synthetic...
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Schottky junction solar cell (section Gallium arsenide)
power-conversion efficiency to 5.2%. Under the right conditions, a gallium arsenide cell can produce an efficiency of around 22%. This is considered an...
7 KB (905 words) - 15:47, 1 December 2023
silicon (a-Si), cadmium telluride (CdTe), copper indium gallium selenide (CIGS), or gallium arsenide (GaAs). Solar cells made with newer, less established...
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technology. The main application of black silicon is solar energy. Black Gallium Arsenide with light trapping properties have been also produced by MACE. Huang...
18 KB (2,228 words) - 22:38, 10 December 2023
Gallium manganese arsenide, chemical formula (Ga,Mn)As is a magnetic semiconductor. It is based on the world's second most commonly used semiconductor...
34 KB (3,585 words) - 09:20, 2 May 2024
vapors; (gas lasers) Semiconductors, e.g. gallium arsenide (GaAs), indium gallium arsenide (InGaAs), or gallium nitride (GaN). Liquids, in the form of dye...
9 KB (1,589 words) - 07:57, 3 December 2023
metal arsenides gives arsine: Na3As + 3 H2O → AsH3 + 3 NaOH Many arsenides of the group 13 elements (group III) are valuable semiconductors. Gallium arsenide...
7 KB (637 words) - 20:12, 8 September 2023