Indium nitride (InN) is a small bandgap semiconductor material which has potential application in solar cells and high speed electronics. The bandgap of...

Indium gallium nitride (InGaN, InxGa1−xN) is a semiconductor material made of a mix of gallium nitride (GaN) and indium nitride (InN). It is a ternary...

Gallium nitride (GaN) is a binary III/V direct bandgap semiconductor commonly used in blue light-emitting diodes since the 1990s. The compound is a very...

Indium aluminium nitride (InAlN) is a direct bandgap semiconductor material used in the manufacture of electronic and photonic devices. It is part of the...

compounds to prevent contact with the atmosphere. Indium nitride is readily attacked by acids and alkalis. Indium(I) compounds are not common. The chloride,...

splitting using ansa-titanocene(III/IV) triflate complexes". An Indium gallium nitride (InxGa1-xN) photocatalyst achieved a solar-to-hydrogen efficiency...

known, but only the former is commercially important. The nitrides of aluminium, gallium, and indium adopt the hexagonal wurtzite structure in which each atom...

Indium arsenide, InAs, or indium monoarsenide, is a narrow-bandgap semiconductor composed of indium and arsenic. It has the appearance of grey cubic crystals...

Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. It has a face-centered cubic ("zincblende") crystal structure, identical...

Jitsuo; Fujioka, Hiroshi (2014). "Field-effect transistors based on cubic indium nitride". Scientific Reports. 4 (1): 3951. Bibcode:2014NatSR...4E3951O. doi:10...

Indium gallium aluminium nitride (InGaAlN, AlInGaN) is a GaN-based compound semiconductor. It is usually prepared by epitaxial growth, such as metalorganic...

[citation needed] Indium gallium nitride (InGaN) is a semiconductor material made of a mix of gallium nitride (GaN) and indium nitride (InN). It is a ternary...

Boron nitride Aluminium phosphide Aluminium arsenide Aluminium antimonide Gallium nitride Indium nitride Aluminium oxynitride Titanium aluminium nitride, TiAlN...

g. indium gallium arsenide (InGaAs)) and quaternary alloys (four elements) such as aluminium gallium indium phosphide (AlInGaP)) alloy and Indium arsenide...

She remained at Macquarie to do a PhD in physics (1984) investigating indium nitride, under the supervision of Trevor Tansley. She also spent six months...

Indium antimonide (InSb) is a crystalline compound made from the elements indium (In) and antimony (Sb). It is a narrow-gap semiconductor material from...

developing a way to lessen the efficiency droop by using ceramic aluminium nitride (AlN) substrates, which are more thermally conductive than the commercially...

switching circuits, and infrared circuits. Semiconducting gallium nitride and indium gallium nitride produce blue and violet light-emitting diodes and diode lasers...

oxide or indium suboxide), at 2000 °C it decomposes. It is soluble in acids but not in alkali. With ammonia at high temperature indium nitride is formed:...

dissolving nitrogen gas with indium-scandium melts, magnetron sputtering, MBE, HVPE and other deposition methods. Scandium nitride is also an effective gate...

platforms. Silicon nitride is one of those material platforms, next to, for example, Silicon Photonics and Indium Phosphide. Silicon Nitride photonic integrated...

sulfate – In2(SO4)3 Indium antimonide – InSb Indium arsenide – InAs Indium nitride – InN Indium phosphide – InP Indium(I) iodide – InI Indium(III) nitrate –...

compositions include chemical elements such as boron, cadmium, silver, hafnium, or indium, that are capable of absorbing many neutrons without themselves decaying...

AlGaInP is frequently used in LEDs for lighting systems, along with indium gallium nitride (InGaN).[citation needed] A diode laser consists of a semiconductor...

optical properties of the material. Gallium phosphide Indium(III) phosphide Indium gallium nitride Indium gallium arsenide GaInP/GaAs solar cell Alex Freundlich...

epitaxial layers. Wide-bandgap semiconductors such as gallium nitride and indium gallium nitride are especially promising. In SiGe graded heterostructure transistors...

Arsenide nitrides or nitride arsenides are compounds containing anions composed of nitride (N3−) and arsenide (As3−). They can be considered as mixed...

Hiroshi Amano (Nagoya University, Japan). Gallium nitride Indium nitride Aluminium nitride Boron nitride "IWN2018". "IWN2016" (PDF). Archived from the original...

Gallium nitride Indium nitride Aluminium nitride Boron nitride (hexagonal form) "IWN2016" (PDF). "14th International Conference on Nitride Semiconductors"...

Devices incorporating more indium generally show better high-frequency performance, while in recent years, gallium nitride HEMTs have attracted attention...