• Resistive random-access memory (ReRAM or RRAM) is a type of non-volatile (NV) random-access (RAM) computer memory that works by changing the resistance...
    53 KB (6,188 words) - 04:48, 31 July 2024
  • Magnetoresistive random-access memory (MRAM) is a type of non-volatile random-access memory which stores data in magnetic domains. Developed in the mid-1980s...
    46 KB (5,286 words) - 21:14, 6 May 2024
  • Thumbnail for Spin-transfer torque
    elements in magnetic random-access memory. Spin-transfer torque magnetic random-access memory (STT-RAM or STT-MRAM) is a non-volatile memory with near-zero...
    10 KB (992 words) - 05:04, 31 July 2024
  • Data Rate 4 Synchronous Dynamic Random-Access Memory (DDR4 SDRAM) is a type of synchronous dynamic random-access memory with a high bandwidth ("double...
    49 KB (4,491 words) - 03:25, 31 July 2024
  • Thumbnail for Computer memory
    Examples of volatile memory are dynamic random-access memory (DRAM) used for primary storage and static random-access memory (SRAM) used mainly for...
    29 KB (3,274 words) - 10:19, 29 July 2024
  • Phase-change memory (also known as PCM, PCME, PRAM, PCRAM, OUM (ovonic unified memory) and C-RAM or CRAM (chalcogenide RAM)) is a type of non-volatile random-access...
    41 KB (4,677 words) - 04:38, 31 July 2024
  • programmable metallization cell (PMC) resistive random-access memory (RRAM) nano-RAM memristor-based memory Since each memory has its limitations, none of these...
    4 KB (508 words) - 12:37, 10 June 2024
  • Weebit Nano (category Computer memory companies)
    develops Resistive Random-Access Memory (ReRAM or RRAM) technologies. Resistive Random-Access Memory is a specialized form of non-volatile memory (NVM) for...
    28 KB (2,739 words) - 18:34, 31 July 2024
  • Thumbnail for Memristor
    Memristor (redirect from Memory resistor)
    aims at a real physical modeling of non-volatile memory elements, e.g., resistive random-access memory devices, one has to keep an eye on the aforementioned...
    114 KB (13,880 words) - 04:22, 31 July 2024
  • Thumbnail for 3D XPoint
    3D XPoint (redirect from 3D XPoint memory)
    electrical resistance and to be bit addressable. Similarities to the resistive random-access memory under development by Crossbar Inc. have been noted, but 3D XPoint...
    19 KB (1,891 words) - 12:53, 30 May 2024
  • Crossbar (computer hardware manufacturer), a company manufacturing resistive random-access memory Crossbar (film), a 1979 Canadian television film This disambiguation...
    675 bytes (117 words) - 17:06, 18 August 2023
  • metal-oxide thin films for applications in Resistive random-access memory (RRAM), an emerging non-volatile memory storage technology. She was awarded her...
    4 KB (341 words) - 01:44, 31 July 2024
  • Thumbnail for KAIST
    technology Gweng-su Rhim, developed next generation Transparent Resistive Random Access Memory (TRRAM) Seung-man Yang, developed new photonics crystal-based...
    32 KB (3,197 words) - 03:21, 3 August 2024
  • Crossbar, Inc. (category Computer memory companies)
    Clara, California. Crossbar develops a class of non-volatile resistive random-access memory (RRAM) technology. Crossbar was founded in 2010, by George Minassian...
    7 KB (558 words) - 14:19, 10 July 2024
  • Thumbnail for Themis Prodromakis
    technologies. He has been involved in developing emerging metal-oxide resistive random-access memory technologies with applications in embedded electronics. and...
    7 KB (679 words) - 05:09, 31 July 2024
  • Nano-RAM (category Non-volatile random-access memory)
    NRAM acts as a resistive non-volatile random-access memory (RAM) and can be placed in two or more resistive modes depending on the resistive state of the...
    18 KB (2,363 words) - 00:12, 10 June 2024
  • Thumbnail for Memory cell (computing)
    consists of metal–oxide–semiconductor (MOS) memory cells. Modern random-access memory (RAM) uses MOS field-effect transistors (MOSFETs) as flip-flops,...
    27 KB (2,941 words) - 11:25, 12 June 2024
  • Electrochemical Random-Access Memory (ECRAM) is a type of non-volatile memory (NVM) with multiple levels per cell (MLC) designed for deep learning analog...
    23 KB (2,487 words) - 03:31, 31 July 2024
  • may read information off a floppy disk and store it temporarily in random-access memory before it is written to the hard drive to be processed at a future...
    7 KB (955 words) - 15:16, 19 May 2024
  • Thumbnail for Magnetic storage
    either sequential access memory or random access memory, although in some cases the distinction is not perfectly clear. The access time can be defined...
    18 KB (2,106 words) - 16:21, 7 May 2024
  • Thumbnail for Conductive atomic force microscopy
    "Grain boundaries as preferential sites for resistive switching in the HfO2 resistive random access memory structures". Applied Physics Letters. 100 (12):...
    49 KB (5,950 words) - 03:29, 19 May 2024
  • universal memory device applicable to a wide variety of roles. Other contenders included magnetoresistive random-access memory (MRAM), phase-change memory (PCRAM)...
    15 KB (1,775 words) - 13:43, 4 August 2024
  • a capacitive touchscreen. Transparent resistive random access memory Transparent resistive random access memory (TRRAM) is the world's first transparent...
    167 KB (16,275 words) - 06:30, 2 August 2024
  • Thumbnail for Random number generation
    Random number generation is a process by which, often by means of a random number generator (RNG), a sequence of numbers or symbols that cannot be reasonably...
    37 KB (4,422 words) - 12:54, 18 July 2024
  • Thumbnail for Regius Professor of Engineering (Edinburgh)
    Institute of Physics. His work focuses on developing metal-oxide Resistive Random-Access Memory technologies and related applications and is leading an interdisciplinary...
    12 KB (1,224 words) - 08:25, 19 October 2023
  • Thumbnail for Vacuum-tube computer
    vacuum tubes was the incorporation of large memories that could store thousands of bits of data and randomly access them at high speeds. That, in turn, allowed...
    25 KB (2,709 words) - 00:48, 31 July 2024
  • Electrodes on the Switching Behavior of Strontium Titanate Nickelate Resistive Random Access Memory". Materials. 8 (10): 7191–7198. Bibcode:2015Mate....8.7191L...
    32 KB (1,837 words) - 17:43, 29 December 2023
  • Thumbnail for Content-addressable memory
    recognition unit. Unlike standard computer memory, random-access memory (RAM), in which the user supplies a memory address and the RAM returns the data word...
    14 KB (1,603 words) - 05:22, 30 April 2024
  • Thumbnail for Boron nitride
    substrate material. It can also be used as a dielectric in resistive random access memories. Hexagonal BN is used in xerographic process and laser printers...
    71 KB (7,539 words) - 22:32, 28 June 2024
  • possible side-channel attacks. Argon2i is optimized to resist side-channel attacks. It accesses the memory array in a password independent order. Argon2id is...
    14 KB (1,491 words) - 21:00, 3 April 2024