In electronics, the metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, MOS FET, or MOS transistor) is a type of field-effect transistor...
99 KB (11,953 words) - 23:36, 19 October 2024
A power MOSFET is a specific type of metal–oxide–semiconductor field-effect transistor (MOSFET) designed to handle significant power levels. Compared to...
41 KB (5,000 words) - 10:30, 2 November 2024
Transistor (section MOSFET (MOS transistor))
transistor is the metal–oxide–semiconductor field-effect transistor (MOSFET), the MOSFET was invented at Bell Labs between 1955 and 1960. Transistors revolutionized...
100 KB (10,421 words) - 09:34, 18 October 2024
The floating-gate MOSFET (FGMOS), also known as a floating-gate MOS transistor or floating-gate transistor, is a type of metal–oxide–semiconductor field-effect...
14 KB (1,731 words) - 03:09, 29 September 2024
comes in two types: junction FET (JFET) and metal-oxide-semiconductor FET (MOSFET). FETs have three terminals: source, gate, and drain. FETs control the current...
53 KB (6,396 words) - 11:27, 2 November 2024
The MOSFET (metal–oxide–semiconductor field-effect transistor) is a type of insulated-gate field-effect transistor (IGFET) that is fabricated by the controlled...
174 KB (14,462 words) - 21:29, 10 October 2024
Insulated-gate bipolar transistor (category MOSFETs)
after the power MOSFET.[citation needed] An IGBT cell is constructed similarly to an n-channel vertical-construction power MOSFET, except the n+ drain...
32 KB (3,513 words) - 19:43, 15 November 2024
MOSFET gate driver is a specialized circuit that is used to drive the gate (gate driver) of power MOSFETs effectively and efficiently in high-speed switching...
1 KB (131 words) - 20:30, 15 July 2023
History of the transistor (section MOSFET)
the early 1950s and led to the first widespread use of transistors. The MOSFET was invented at Bell Labs between 1955 and 1960, after Frosch and Derick...
68 KB (7,623 words) - 05:10, 24 November 2024
The EKV Mosfet model is a mathematical model of metal-oxide semiconductor field-effect transistors (MOSFET) which is intended for circuit simulation and...
3 KB (246 words) - 20:41, 30 July 2024
Power semiconductor device (category MOSFETs)
of the power MOSFET. Some common power devices are the power MOSFET, power diode, thyristor, and IGBT. The power diode and power MOSFET operate on similar...
33 KB (3,292 words) - 18:51, 10 October 2024
the MOSFET. Consequently, the diodes in the Dickson multiplier are often replaced with MOSFETs wired to behave as diodes. The diode-wired MOSFET version...
19 KB (2,548 words) - 22:09, 3 November 2024
Dosimeter (section MOSFET dosimeter)
for radiotherapy radiation beams. The main advantages of MOSFET devices are: 1. The MOSFET dosimeter is direct reading with a very thin active area (less...
12 KB (1,521 words) - 16:27, 30 March 2024
Silicon on insulator (redirect from SOI MOSFET)
low cost alternative to FinFETs. An SOI MOSFET is a metal–oxide–semiconductor field-effect transistor (MOSFET) device in which a semiconductor layer such...
18 KB (1,979 words) - 06:57, 30 September 2024
Multigate device (redirect from Dual-gate MOSFET)
multi-gate MOSFET or multi-gate field-effect transistor (MuGFET) refers to a metal–oxide–semiconductor field-effect transistor (MOSFET) that has more...
40 KB (4,186 words) - 15:03, 18 November 2024
Active rectification (section MOSFET-based ideal diode)
rectification by replacing diodes with actively controlled switches, usually power MOSFETs or power bipolar junction transistors (BJT). Whereas normal semiconductor...
7 KB (815 words) - 23:51, 27 June 2024
basis, which limited them to a number of specialised applications. The MOSFET was invented at Bell Labs between 1955 and 1960. It was the first truly...
35 KB (3,321 words) - 15:43, 17 November 2024
For power semiconductor devices (such as BJT, MOSFET, thyristor or IGBT), the safe operating area (SOA) is defined as the voltage and current conditions...
9 KB (1,156 words) - 03:44, 7 July 2023
circuit can also be built using bipolar transistors, or MOSFETs, or even one FET (or MOSFET) and one BJT. This circuit arrangement was very common in...
23 KB (2,909 words) - 22:34, 7 October 2024
minimized by selecting MOSFETs with low gate charge, by driving the MOSFET gate to a lower voltage (at the cost of increased MOSFET conduction losses), or...
43 KB (6,700 words) - 05:38, 21 November 2024
One example of this is the event camera. The MOSFET invented at Bell Labs between 1955 and 1960, MOSFET sensors (MOS sensors) were later developed, and...
26 KB (3,283 words) - 11:09, 9 October 2024
field-effect transistor (MOSFET) fabrication process that uses complementary and symmetrical pairs of p-type and n-type MOSFETs for logic functions. CMOS...
57 KB (6,555 words) - 03:37, 25 November 2024
applications. MOSFET dosimeters are now used as clinical dosimeters for radiotherapy radiation beams. The main advantages of MOSFET devices are: 1. The MOSFET dosimeter...
3 KB (356 words) - 20:21, 22 December 2023
electronic amplifier in which the amplifying devices (transistors, usually MOSFETs) operate as electronic switches, and not as linear gain devices as in other...
15 KB (2,069 words) - 18:26, 17 September 2024
Dawon Kahng (category MOSFETs)
his work in solid-state electronics. He is best known for inventing the MOSFET (metal–oxide–semiconductor field-effect transistor, or MOS transistor),...
14 KB (1,186 words) - 12:17, 8 November 2024
Current mirror (section Basic MOSFET current mirror)
MOSFET mirrors because MOSFETs have rather low intrinsic output resistance values. A MOSFET version of Figure 3 is shown in Figure 4, where MOSFETs M3...
28 KB (4,083 words) - 23:02, 7 October 2024
Moore's law (category MOSFETs)
working in the field. In 1974, Robert H. Dennard at IBM recognized the rapid MOSFET scaling technology and formulated what became known as Dennard scaling,...
104 KB (10,698 words) - 00:17, 25 November 2024
in 1968. Since then, the MOSFET has been the basic building block of modern electronics. The mass-production of silicon MOSFETs and MOS integrated circuit...
81 KB (8,277 words) - 13:54, 13 November 2024
switching. An SSR based on a single MOSFET, or multiple MOSFETs in a paralleled array, can work well for DC loads. MOSFETs have an inherent substrate diode...
7 KB (837 words) - 20:42, 8 October 2024
adjacent at the surface. Subsequently, in 1960, a team demonstrated a working MOSFET at Bell Labs. This led to the development of metal–oxide–semiconductor (MOS)...
58 KB (5,935 words) - 01:40, 16 November 2024