Epitaxy (prefix epi- means "on top of”) refers to a type of crystal growth or material deposition in which new crystalline layers are formed with one...
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Molecular-beam epitaxy (MBE) is an epitaxy method for thin-film deposition of single crystals. MBE is widely used in the manufacture of semiconductor...
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Metalorganic vapour-phase epitaxy (MOVPE), also known as organometallic vapour-phase epitaxy (OMVPE) or metalorganic chemical vapour deposition (MOCVD)...
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Hydride vapour-phase epitaxy (HVPE) is an epitaxial growth technique often employed to produce semiconductors such as GaN, GaAs, InP and their related...
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Chemical beam epitaxy (CBE) forms an important class of deposition techniques for semiconductor layer systems, especially III-V semiconductor systems...
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Thermal laser epitaxy (TLE) is a physical vapor deposition technique that utilizes irradiation from continuous-wave lasers to heat sources locally for...
13 KB (1,373 words) - 06:18, 10 June 2024
Atomic layer epitaxy (ALE), more generally known as atomic layer deposition (ALD), is a specialized form of thin film growth (epitaxy) that typically deposit...
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fabrication plants. ASM's technologies include atomic layer deposition, epitaxy, chemical vapor deposition and diffusion. The company was founded by Arthur...
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Bridgman–Stockbarger method Van Arkel–de Boer process Czochralski method Epitaxy Flux method Fractional crystallization Fractional freezing Hydrothermal synthesis...
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Selective area epitaxy is the local growth of epitaxial layer through a patterned amorphous dielectric mask (typically SiO2 or Si3N4) deposited on a semiconductor...
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epiwafer) is a wafer of semiconducting material made by epitaxial growth (epitaxy) for use in photonics, microelectronics, spintronics, or photovoltaics...
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(ALD) Physical vapor deposition (PVD) Sputtering Evaporation Epitaxy Molecular beam epitaxy (MBE) Ion beam deposition Plasma ashing (for complete photoresist...
106 KB (11,198 words) - 14:06, 16 August 2024
high-brightness LEDs used a thin film of GaN deposited via metalorganic vapour-phase epitaxy (MOVPE) on sapphire. Other substrates used are zinc oxide, with lattice...
38 KB (3,738 words) - 09:42, 9 August 2024
include: Molecular-beam epitaxy (MBE) Hydride vapor-phase epitaxy (HVPE) Liquid phase epitaxy (LPE) Metal-organic molecular-beam epitaxy (MOMBE) Atomic layer...
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The Center for Advanced Materials, formerly the Space Vacuum Epitaxy Center, is a laboratory established in 1986 at the University of Houston for researching...
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Graphene production techniques (section Epitaxy)
commonly referred to as epitaxy) or epitaxial layer deposition on a sapphire (Heteroepitaxy). A special method in CVD, called Epitaxy or Epitaxial Layer Deposition...
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from hydrogen. Hydrogen purifiers are used in metalorganic vapour phase epitaxy reactors for LED production. Fuel cell electric vehicles commonly use polymer...
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Graphene nanoribbon (section Epitaxy)
Graphene nanoribbons (GNRs, also called nano-graphene ribbons or nano-graphite ribbons) are strips of graphene with width less than 100 nm. Graphene ribbons...
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Bridgman–Stockbarger method Van Arkel–de Boer process Czochralski method Epitaxy Flux method Fractional crystallization Fractional freezing Hydrothermal synthesis...
12 KB (1,548 words) - 20:55, 4 January 2024
allows for the creation of desirable electrical properties. Molecular-beam epitaxy is a technique used to construct thin epitaxial films of materials ranging...
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satellite power applications, are made by molecular-beam epitaxy or metalorganic vapour-phase epitaxy of thin films of gallium arsenide, indium gallium phosphide...
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Community complex. In 1968, molecular beam epitaxy was developed by J.R. Arthur and A.Y. Cho; molecular beam epitaxy allows semiconductor chips and laser matrices...
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Gd3Ga2(GaO4)3 which is synthesized for use as a substrate for liquid-phase epitaxy of magnetic garnet films for bubble memory and magneto-optical applications...
53 KB (5,147 words) - 16:58, 8 August 2024
Bridgman–Stockbarger method Van Arkel–de Boer process Czochralski method Epitaxy Flux method Fractional crystallization Fractional freezing Hydrothermal synthesis...
3 KB (343 words) - 05:37, 1 July 2024
Bridgman–Stockbarger method Van Arkel–de Boer process Czochralski method Epitaxy Flux method Fractional crystallization Fractional freezing Hydrothermal synthesis...
10 KB (1,232 words) - 01:45, 19 March 2024
Bridgman–Stockbarger method Van Arkel–de Boer process Czochralski method Epitaxy Flux method Fractional crystallization Fractional freezing Hydrothermal synthesis...
6 KB (795 words) - 16:31, 31 March 2024
Toshiba has stopped research, possibly due to low yields. Some opt for epitaxy, which is difficult on silicon, while others, like the University of Cambridge...
166 KB (18,396 words) - 18:02, 31 July 2024
D. K; Gupta, G (2022). "van der Waals Epitaxy of Transition Metal Dichalcogenides via Molecular Beam Epitaxy: Looking Back and Moving Forward". Materials...
93 KB (10,303 words) - 07:22, 20 August 2024