Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a zinc blende crystal structure. Gallium arsenide is used in the manufacture of...

of 37.0 °C (98.6 °F). Gallium is predominantly used in electronics. Gallium arsenide, the primary chemical compound of gallium in electronics, is used...

Aluminium gallium arsenide (also gallium aluminium arsenide) (AlxGa1−xAs) is a semiconductor material with very nearly the same lattice constant as GaAs...

Indium gallium arsenide (InGaAs) (alternatively gallium indium arsenide, GaInAs) is a ternary alloy (chemical compound) of indium arsenide (InAs) and...

Gallium arsenide phosphide (GaAs1−xPx) is a semiconductor material, an alloy of gallium arsenide and gallium phosphide. It exists in various composition...

at much higher temperatures and work at much higher voltages than gallium arsenide (GaAs) transistors, they make ideal power amplifiers at microwave frequencies...

solar cells based on monolithic, series connected, gallium indium phosphide (GaInP), gallium arsenide (GaAs), and germanium (Ge) p–n junctions, are increasing...

materials have also been employed. Gallium arsenide (GaAs), a III-V semiconductor produced via the Czochralski method, gallium nitride (GaN) and silicon carbide...

crystals with a melting point of 942 °C. Indium arsenide is similar in properties to gallium arsenide and is a direct bandgap material, with a bandgap...

junction cells consisting of indium gallium phosphide (InGaP), gallium arsenide (GaAs) or indium gallium arsenide (InGaAs) and germanium (Ge) can be fabricated...

between different semiconductor materials) of aluminium gallium arsenide (AlGaAs)-gallium arsenide (GaAs) which has twice the electron mobility of a GaAs-metal...

silicon (a-Si), cadmium telluride (CdTe), copper indium gallium selenide (CIGS), or gallium arsenide (GaAs). Solar cells made with newer, less established...

Indium gallium arsenide phosphide (GaxIn1−xAsyP1−y) is a quaternary compound semiconductor material, an alloy of gallium arsenide, gallium phosphide,...

devices. It is also a component of the III–V compound semiconductor gallium arsenide. Arsenic and its compounds, especially the trioxide, are used in the...

germanium, gallium arsenide, and elements near the so-called "metalloid staircase" on the periodic table. After silicon, gallium arsenide is the second-most...

creates the critical direct bandgap property. Gallium arsenide, indium phosphide, gallium antimonide, and gallium nitride are all examples of compound semiconductor...

Gallium manganese arsenide, chemical formula (Ga,Mn)As is a magnetic semiconductor. It is based on the world's second most commonly used semiconductor...

semiconductors have both advantages and disadvantages. For example, gallium arsenide (GaAs) has six times higher electron mobility than silicon, which allows...

limit for efficiency of the GaSb cell in this setup is 52%. Indium gallium arsenide antimonide (InGaAsSb) is a compound III-V semiconductor. (InxGa1−xAsySb1−y)...

Gallium arsenide antimonide, also known as gallium antimonide arsenide or GaAsSb (GaAs(1-x)Sbx), is a ternary III-V semiconductor compound; x indicates...

Aluminium arsenide (AlAs) is a semiconductor material with almost the same lattice constant as gallium arsenide and aluminium gallium arsenide and wider...

light emission can in theory be varied from violet to amber. Aluminium gallium nitride (AlGaN) of varying Al/Ga fraction can be used to manufacture the...

metal arsenides gives arsine: Na3As + 3 H2O → AsH3 + 3 NaOH Many arsenides of the group 13 elements (group III) are valuable semiconductors. Gallium arsenide...

phononic crystal. Aluminium gallium arsenide Boron nitride Indium gallium arsenide Indium arsenide Gallium arsenide Gallium nitride Germanium Metallic...

diodes are made of silicon, but other semiconducting materials such as gallium arsenide and germanium are also used. The obsolete thermionic diode is a vacuum...

power-conversion efficiency to 5.2%. Under the right conditions, a gallium arsenide cell can produce an efficiency of around 22%. This is considered an...

optoelectronic devices based other semiconductors, such as indium gallium arsenide. The devices include pseudomorphic heterojunction bipolar transistors...

velocity with respect to the more common semiconductors silicon and gallium arsenide. It is used mainly in HEMT and HBT structures, but also for the fabrication...

include silicon, gallium arsenide, and indium phosphide, while silicon / silicon-germanium alloys, aluminum gallium arsenide / gallium arsenide, and indium...

the band gap of the semiconductor material used; materials such as gallium arsenide, and others, with various trace doping elements, are used to produce...