The point-contact transistor was the first type of transistor to be successfully demonstrated. It was developed by research scientists John Bardeen and...
8 KB (972 words) - 04:53, 7 November 2024
transistor (FET) in 1926, but it was not possible to construct a working device at that time. The first working device was a point-contact transistor...
100 KB (10,421 words) - 09:34, 18 October 2024
predictability and performance of junction transistors quickly displaced the original point-contact transistor. Diffused transistors, along with other components,...
55 KB (6,797 words) - 13:40, 13 November 2024
transistors at Bell Labs, the point-contact transistor in 1947. Shockley introduced the improved bipolar junction transistor in 1948, which entered production...
68 KB (7,623 words) - 05:10, 24 November 2024
as the focal point of information concerning an activity Point-contact transistor, the first type of solid-state electronic transistor ever constructed...
655 bytes (118 words) - 16:54, 24 March 2018
Brattain instead inventing the point-contact transistor in 1947, which was followed by Shockley's bipolar junction transistor in 1948. The first FET device...
53 KB (6,396 words) - 11:27, 2 November 2024
fellow scientists John Bardeen and William Shockley, invented the point-contact transistor in December 1947. They shared the 1956 Nobel Prize in Physics for...
27 KB (2,876 words) - 17:20, 15 October 2024
The whole structure comprises a four layered NPNP. The bipolar point-contact transistor was invented in December 1947 at the Bell Telephone Laboratories...
32 KB (3,513 words) - 19:43, 15 November 2024
point-contact transistors and 550 diodes, manufactured by STC. It had a 48-bit machine word. The 1955 machine had a total of 200 point-contact transistors and 1...
14 KB (1,540 words) - 10:20, 19 November 2024
Semiconductor (section Early transistors)
developed a voltage when exposed to light. The first working transistor was a point-contact transistor invented by John Bardeen, Walter Houser Brattain, and...
46 KB (5,424 words) - 13:35, 6 November 2024
A fin field-effect transistor (FinFET) is a multigate device, a MOSFET (metal–oxide–semiconductor field-effect transistor) built on a substrate where the...
22 KB (2,338 words) - 12:49, 22 August 2024
An organic field-effect transistor (OFET) is a field-effect transistor using an organic semiconductor in its channel. OFETs can be prepared either by vacuum...
27 KB (3,363 words) - 00:59, 28 October 2024
1948, another team member, John N. Shive, built a point contact transistor with bronze contacts on the front and back of a thin wedge of germanium,...
67 KB (7,131 words) - 16:45, 19 November 2024
bipolar transistors with the emitter of one transistor connected to the base of the other, such that the current amplified by the first transistor is amplified...
9 KB (1,317 words) - 02:05, 13 October 2024
of Intermetall's hand-made transistors, based upon the 1948 invention of the "Transistor"-germanium point-contact transistor by Herbert Mataré and Heinrich...
27 KB (3,194 words) - 17:56, 7 October 2024
as an improvement over the point-contact transistor and the later grown-junction transistor and alloy-junction transistor. Both offered much higher speed...
2 KB (247 words) - 01:49, 25 October 2022
Schottky barrier (redirect from Schottky contact)
carriers in the semiconductor. An example of this is seen in the Point-contact transistor. A Schottky diode is a single metal–semiconductor junction, used...
16 KB (2,096 words) - 08:31, 3 October 2024
The transistor count is the number of transistors in an electronic device (typically on a single substrate or silicon die). It is the most common measure...
229 KB (10,130 words) - 10:17, 13 November 2024
A thin-film transistor (TFT) is a special type of field-effect transistor (FET) where the transistor is made by thin film deposition. TFTs are grown on...
29 KB (3,125 words) - 18:03, 15 October 2024
A unijunction transistor (UJT) is a three-lead electronic semiconductor device with only one junction. It acts exclusively as an electrically controlled...
9 KB (1,179 words) - 04:49, 2 June 2024
Diode (redirect from Point contact diode)
diodes, diode-connected transistors, or current-regulating diodes. Crystal rectifiers or crystal diodes These are point-contact diodes. The 1N21 series...
64 KB (7,414 words) - 15:25, 25 November 2024
JFET (redirect from Junction Field-Effect Transistor)
FET, but failed in their repeated attempts. They discovered the point-contact transistor in the course of trying to diagnose the reasons for their failures...
20 KB (2,415 words) - 14:30, 7 June 2024
with uncertainty (electrical noise). The first working transistor was a point-contact transistor invented by John Bardeen and Walter Houser Brattain while...
81 KB (8,277 words) - 13:54, 13 November 2024
John Bardeen (section Invention of the transistor)
were working without Shockley when they succeeded in creating a point-contact transistor that achieved amplification. By the next month, Bell Labs' patent...
44 KB (4,715 words) - 09:29, 1 November 2024
technological step took several decades to appear, when the first working point-contact transistor was invented by John Bardeen and Walter Houser Brattain at Bell...
35 KB (3,321 words) - 15:43, 17 November 2024
Semiconductor device (section Transistor)
often given as the birthdate of the transistor. What is now known as the "p–n–p point-contact germanium transistor" operated as a speech amplifier with...
37 KB (5,373 words) - 01:15, 21 November 2024
A diffused junction transistor is a transistor formed by diffusing dopants into a semiconductor substrate. The diffusion process was developed later than...
5 KB (589 words) - 03:26, 31 July 2024
point-contact transistor. A point-contact transistor having three emitters. It became obsolete in the middle 1950s. Pentode field-effect transistors having...
997 bytes (89 words) - 10:19, 10 April 2023
associated due to some similarities. The first working transistor was a point-contact transistor invented by John Bardeen and Walter Houser Brattain while...
44 KB (4,661 words) - 01:21, 14 October 2024
Brattain invented the point-contact transistor at Bell Labs in 1947, followed by William Shockley inventing the bipolar junction transistor at Bell Labs in...
49 KB (6,189 words) - 18:46, 14 November 2024