Zinc arsenide (Zn3As2) is a binary compound of zinc with arsenic which forms gray tetragonal crystals. It is an inorganic semiconductor with a band gap...
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Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a zinc blende crystal structure. Gallium arsenide is used in the manufacture of...
50 KB (5,542 words) - 18:33, 16 October 2024
Zinc cadmium phosphide arsenide (Zn-Cd-P-As) is a quaternary system of group II (IUPAC group 12) and group V (IUPAC group 15) elements. Many of the inorganic...
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cube. The crystalline structure of zinc phosphide is very similar to that of cadmium arsenide (Cd3As2), zinc arsenide (Zn3As2) and cadmium phosphide (Cd3P2)...
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Arsine (redirect from Hydrogen arsenide)
As3− react with protonic reagents to also produce this gas. Zinc arsenide and sodium arsenide are suitable precursors: Zn3As2 + 6 H+ → 2 AsH3 + 3 Zn2+ Na3As...
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done research on the eutectic system of it and zinc arsenide. It reacts with iron, iron(III) arsenide, iron(III) oxide and yttrium(III) fluoride (for...
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The crystalline structure of cadmium arsenide is very similar to that of zinc phosphide (Zn3P2), zinc arsenide (Zn3As2) and cadmium phosphide (Cd3P2)...
15 KB (1,450 words) - 13:01, 21 May 2024
Zinc sulfide (or zinc sulphide) is an inorganic compound with the chemical formula of ZnS. This is the main form of zinc found in nature, where it mainly...
10 KB (998 words) - 03:47, 25 May 2024
Indium arsenide, InAs, or indium monoarsenide, is a narrow-bandgap semiconductor composed of indium and arsenic. It has the appearance of grey cubic crystals...
5 KB (284 words) - 00:37, 15 May 2024
semiconductors have both advantages and disadvantages. For example, gallium arsenide (GaAs) has six times higher electron mobility than silicon, which allows...
54 KB (2,525 words) - 05:44, 8 October 2024
YAg Yttrium zinc – YZn Zinc arsenide – Zn3As2 Zinc bromide – ZnBr2 Zinc carbonate – ZnCO3 Zinc chloride – ZnCl2 Zinc cyanide – Zn(CN)2 Zinc diphosphide...
119 KB (8,735 words) - 14:26, 16 September 2024
Indium gallium arsenide (InGaAs) (alternatively gallium indium arsenide, GaInAs) is a ternary alloy (chemical compound) of indium arsenide (InAs) and gallium...
30 KB (3,798 words) - 13:55, 5 October 2024
13464-44-3 Zn3As2 zinc arsenide 12006-40-5 Zn3N2 zinc nitride 1313-49-1 Zn3P2 zinc phosphide 1314-84-7 Zn3(PO4)2 zinc phosphate 7779-90-0 Zn3Sb2 zinc antimonide...
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produced together with small amount of diphosphane) Arsine from arsenides, e.g. zinc arsenide Stibine from antimonides, e.g. magnesium antimonide Silanes...
11 KB (1,334 words) - 10:38, 9 October 2024
Group 12 element (redirect from Zinc Group Element)
semi-conductors such as gallium arsenide. Zinc and cadmium are electropositive while mercury is not. As a result, zinc and cadmium metal are good reducing...
72 KB (7,389 words) - 17:59, 11 September 2024
pyroelectricity, which centrosymmetric crystals lack.[citation needed] The nickel arsenide structure consists of two interpenetrating sublattices: a primitive hexagonal...
18 KB (1,485 words) - 04:13, 3 July 2024
Aluminium arsenide (AlAs) is a semiconductor material with almost the same lattice constant as gallium arsenide and aluminium gallium arsenide and wider...
8 KB (691 words) - 04:16, 21 April 2024
to be grown with or on aluminium antimonide, gallium antimonide, indium arsenide, and lead selenide. With some lattice mismatch, it can also be grown on...
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0 °C (98.6 °F). Gallium is predominantly used in electronics. Gallium arsenide, the primary chemical compound of gallium in electronics, is used in microwave...
74 KB (8,783 words) - 14:18, 17 October 2024
diodes and diode lasers. For example, gallium arsenide, aluminium gallium arsenide, and aluminium arsenide have almost equal lattice constants, making it...
16 KB (1,177 words) - 16:39, 20 March 2024
itself, lead(II) nitrate, many compound semiconductors (such as gallium arsenide and cadmium telluride), and a wide array of other binary compounds.[citation...
49 KB (3,620 words) - 14:56, 4 October 2024
limit for efficiency of the GaSb cell in this setup is 52%. Indium gallium arsenide antimonide (InGaAsSb) is a compound III-V semiconductor. (InxGa1−xAsySb1−y)...
42 KB (5,566 words) - 22:34, 1 June 2024
octahedral positions, such as the iron sulfide pyrrhotite and the nickel arsenide niccolite. The galena group is named after its most common member, with...
16 KB (1,537 words) - 11:35, 10 October 2024
germanium and gallium arsenide have nearly identical lattice constant, germanium substrates can be used to make gallium-arsenide solar cells. Germanium...
71 KB (7,384 words) - 18:29, 15 October 2024
band gap of the semiconductor material used; materials such as gallium arsenide, and others, with various trace doping elements, are used to produce different...
32 KB (3,317 words) - 08:00, 19 October 2024
cadmium phosphide is very similar to that of zinc phosphide (Zn3P2), cadmium arsenide (Cd3As2) and zinc arsenide (Zn3As2). These compounds of the Zn-Cd-P-As...
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heteroepitaxy). In particular, III-V semiconductor compounds like gallium arsenide are frequently used as cheap substrates, resulting in stronger tensions...
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maint: multiple names: authors list (link) Rössler, U. (2002). "Gallium arsenide (GaAs), intrinsic carrier concentration, electrical and thermal conductivity"...
10 KB (1,366 words) - 16:33, 16 June 2024
annabergite, occurs as a light green nickel bloom on nickel arsenides. In addition iron, magnesium and zinc can also substitute for the cobalt position, creating...
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the addition of other metals (including aluminium, manganese, nickel, or zinc) and sometimes non-metals, such as phosphorus, or metalloids, such as arsenic...
44 KB (4,882 words) - 17:29, 7 October 2024