Metalorganic vapour-phase epitaxy (MOVPE), also known as organometallic vapour-phase epitaxy (OMVPE) or metalorganic chemical vapour deposition (MOCVD)...
12 KB (1,318 words) - 21:22, 22 December 2024
transistor Pulsed laser deposition Metalorganic vapour phase epitaxy Quantum cascade laser Solar cell Thermal Laser Epitaxy Wetting layer McCray, W.P. (2007)...
14 KB (1,469 words) - 09:52, 26 November 2024
high-brightness LEDs used a thin film of GaN deposited via metalorganic vapour-phase epitaxy (MOVPE) on sapphire. Other substrates used are zinc oxide...
40 KB (3,877 words) - 18:59, 1 January 2025
polymers, such as polyethylene and polystyrene. The process of metalorganic vapour-phase epitaxy (MOCVD) entails pyrolysis of volatile organometallic compounds...
82 KB (8,509 words) - 15:41, 3 January 2025
cases, argon, from hydrogen. Hydrogen purifiers are used in metalorganic vapour phase epitaxy reactors for LED production. Fuel cell electric vehicles commonly...
16 KB (1,392 words) - 17:12, 14 November 2024
Chemical vapor deposition (redirect from Chemical vapour deposition)
metallurgy Electrostatic spray assisted vapour deposition Element Six Ion plating Metalorganic vapour phase epitaxy Virtual metrology Lisa McElwee-White...
42 KB (5,006 words) - 15:45, 8 December 2024
epitaxial cadmium telluride and mercury cadmium telluride using metalorganic vapour phase epitaxy. Dimethyl telluride as a product of microbial metabolism was...
6 KB (442 words) - 08:47, 2 September 2024
and for its high-speed electronics. The laboratory invented Metalorganic vapour-phase epitaxy (MOVPE), also commonly known as Metal Organic Chemical Vapor...
27 KB (2,896 words) - 22:11, 18 November 2024
atomic layer deposition. TMA is the preferred precursor for metalorganic vapour phase epitaxy (MOVPE) of aluminium-containing compound semiconductors, such...
11 KB (883 words) - 13:36, 19 October 2024
the vapor phase, depending on the material and the growth conditions via epitaxial growth techniques such as metalorganic vapour-phase epitaxy (MOCVD) or...
19 KB (2,034 words) - 09:10, 22 December 2024
at 550 °C. Thin films of ε-Ga2O3 are deposited by means of metalorganic vapour-phase epitaxy using trimethylgallium and water on sapphire substrates at...
30 KB (2,885 words) - 13:03, 25 May 2024
extremely small LED packages. GaN is often deposited using metalorganic vapour-phase epitaxy (MOCVD), and it also uses lift-off. Even though white light...
48 KB (4,940 words) - 01:26, 21 December 2024
a variety of methods including chemical vapor deposition, metalorganic vapour phase epitaxy, electrodeposition, sputtering, spray pyrolysis, thermal oxidation...
85 KB (9,267 words) - 14:51, 28 December 2024
nitride under the supervision of Andrew Briggs. She used metalorganic vapour-phase epitaxy (MOVPE) to grow quantum dots. She joined the University of...
8 KB (659 words) - 15:56, 31 December 2024
growth methods such as molecular beam epitaxy (MBE), metalorganic vapour phase epitaxy (MOVPE) and chemical beam epitaxy (CBE). By SAE, semiconductor nanostructures...
7 KB (907 words) - 21:22, 22 December 2024
spontaneously under certain conditions during molecular beam epitaxy (MBE) and metalorganic vapour-phase epitaxy (MOVPE), when a material is grown on a substrate...
113 KB (13,222 words) - 17:44, 2 December 2024
ISBN 978-0-387-95021-1. Capper, Peter; Elliott, C. T., eds. (2001). "Metalorganic vapour phase epitaxy". Infrared detectors and emitters : materials and devices...
61 KB (7,000 words) - 01:52, 5 January 2025
January 2018 Chinese customs detained detained Veeco's imported Metalorganic vapour-phase epitaxy (MOCVD) equipment on ground its infringed AMEC's patents....
11 KB (1,006 words) - 10:28, 20 December 2024
a high mercury vapour pressure. HgTe can also be grown epitaxially, for example, by sputtering or by metalorganic vapour phase epitaxy. Nanoparticles...
7 KB (521 words) - 22:54, 15 December 2024
group in 1977. Dapkus and Dupuis had, by then, pioneered the metalorganic vapour phase epitaxy MOVPE (also known as OMCVD, OMVPE, and MOCVD) technique for...
13 KB (1,730 words) - 23:55, 1 May 2024
interests include group III-nitride semiconductor materials, metalorganic vapour-phase epitaxy of wide-bandgap semiconductors and (In)AlGaN nanostructures...
5 KB (414 words) - 21:27, 21 June 2024
essentially a solar cell grown on top of another, typically using metalorganic vapour phase epitaxy. Each layer has a different band gap energy to allow it to...
146 KB (16,472 words) - 00:22, 5 January 2025
+ (NH2)2CO + 2 NH4+ Cadmium sulfide can be produced using metalorganic vapour phase epitaxy and MOCVD techniques by the reaction of dimethylcadmium with...
21 KB (1,979 words) - 16:01, 24 July 2024
satellite power applications, are made by molecular-beam epitaxy or metalorganic vapour-phase epitaxy of thin films of gallium arsenide, indium gallium phosphide...
76 KB (9,063 words) - 00:57, 23 December 2024
follows: Metalorganic vapour phase epitaxy Electrostatic spray assisted vapour deposition (ESAVD) Sherardizing Some forms of Epitaxy Molecular beam epitaxy Cathodic...
42 KB (4,223 words) - 07:13, 16 December 2024
techniques similar to semiconductor device fabrication, usually metalorganic vapour phase epitaxy but on "chip" sizes on the order of centimeters. A new technique...
61 KB (8,206 words) - 06:42, 9 November 2024
methods such as molecular beam epitaxy (MBE) or metalorganic vapour phase epitaxy (MOVPE), also known as metalorganic chemical vapor deposition (MOCVD)...
36 KB (4,421 words) - 06:27, 19 December 2024
Trimethylgallium (category Chemical vapour deposition precursors)
trimethylaluminium. TMG is the preferred metalorganic source of gallium for metalorganic vapour phase epitaxy (MOVPE) of gallium-containing compound semiconductors...
5 KB (457 words) - 09:06, 2 May 2024
have also been prepared. Dimethyl telluride is used to in metalorganic vapour phase epitaxy where it serves as a volatile source of Te. It is the only...
8 KB (787 words) - 11:11, 27 July 2024