• Thumbnail for Gallium arsenide
    Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a zinc blende crystal structure. Gallium arsenide is used in the manufacture of...
    46 KB (5,183 words) - 09:13, 2 May 2024
  • Thumbnail for Gallium
    of 37.0 °C (98.6 °F). Gallium is predominantly used in electronics. Gallium arsenide, the primary chemical compound of gallium in electronics, is used...
    74 KB (8,761 words) - 13:06, 13 August 2024
  • Thumbnail for Aluminium gallium arsenide
    Aluminium gallium arsenide (also gallium aluminium arsenide) (AlxGa1−xAs) is a semiconductor material with very nearly the same lattice constant as GaAs...
    3 KB (299 words) - 09:19, 2 May 2024
  • Indium gallium arsenide (InGaAs) (alternatively gallium indium arsenide, GaInAs) is a ternary alloy (chemical compound) of indium arsenide (InAs) and...
    30 KB (3,798 words) - 09:19, 2 May 2024
  • Gallium arsenide phosphide (GaAs1−xPx) is a semiconductor material, an alloy of gallium arsenide and gallium phosphide. It exists in various composition...
    1 KB (128 words) - 09:14, 2 May 2024
  • Thumbnail for Gallium nitride
    at much higher temperatures and work at much higher voltages than gallium arsenide (GaAs) transistors, they make ideal power amplifiers at microwave frequencies...
    38 KB (3,738 words) - 09:42, 9 August 2024
  • Thumbnail for Solar cell
    solar cells based on monolithic, series connected, gallium indium phosphide (GaInP), gallium arsenide (GaAs), and germanium (Ge) p–n junctions, are increasing...
    150 KB (17,048 words) - 18:24, 10 August 2024
  • Thumbnail for Transistor
    between different semiconductor materials) of aluminium gallium arsenide (AlGaAs)-gallium arsenide (GaAs) which has twice the electron mobility of a GaAs-metal...
    95 KB (9,899 words) - 05:04, 4 August 2024
  • Thumbnail for Indium arsenide
    crystals with a melting point of 942 °C. Indium arsenide is similar in properties to gallium arsenide and is a direct bandgap material, with a bandgap...
    5 KB (284 words) - 00:37, 15 May 2024
  • Thumbnail for Multi-junction solar cell
    junction cells consisting of indium gallium phosphide (InGaP), gallium arsenide (GaAs) or indium gallium arsenide (InGaAs) and germanium (Ge) can be fabricated...
    61 KB (8,208 words) - 17:15, 22 July 2024
  • Thumbnail for Arsenic
    devices. It is also a component of the III–V compound semiconductor gallium arsenide. Arsenic and its compounds, especially the trioxide, are used in the...
    130 KB (14,273 words) - 14:22, 13 August 2024
  • Gallium arsenide antimonide, also known as gallium antimonide arsenide or GaAsSb (GaAs(1-x)Sbx), is a ternary III-V semiconductor compound; x indicates...
    7 KB (750 words) - 04:15, 12 May 2024
  • Indium gallium arsenide phosphide (GaxIn1−xAsyP1−y) is a quaternary compound semiconductor material, an alloy of gallium arsenide, gallium phosphide,...
    2 KB (237 words) - 20:40, 16 January 2024
  • Thumbnail for Thin-film solar cell
    silicon (a-Si), cadmium telluride (CdTe), copper indium gallium selenide (CIGS), or gallium arsenide (GaAs). Solar cells made with newer, less established...
    127 KB (14,324 words) - 16:56, 14 July 2024
  • germanium, gallium arsenide, and elements near the so-called "metalloid staircase" on the periodic table. After silicon, gallium arsenide is the second-most...
    46 KB (5,379 words) - 00:26, 3 August 2024
  • limit for efficiency of the GaSb cell in this setup is 52%. Indium gallium arsenide antimonide (InGaAsSb) is a compound III-V semiconductor. (InxGa1−xAsySb1−y)...
    42 KB (5,566 words) - 22:34, 1 June 2024
  • Thumbnail for Band gap
    phononic crystal. Aluminium gallium arsenide Boron nitride Indium gallium arsenide Indium arsenide Gallium arsenide Gallium nitride Germanium Metallic...
    23 KB (2,484 words) - 00:28, 11 June 2024
  • Thumbnail for Laser diode
    creates the critical direct bandgap property. Gallium arsenide, indium phosphide, gallium antimonide, and gallium nitride are all examples of compound semiconductor...
    51 KB (6,397 words) - 13:38, 6 August 2024
  • Thumbnail for Aluminium arsenide
    Aluminium arsenide (AlAs) is a semiconductor material with almost the same lattice constant as gallium arsenide and aluminium gallium arsenide and wider...
    8 KB (691 words) - 04:16, 21 April 2024
  • semiconductors have both advantages and disadvantages. For example, gallium arsenide (GaAs) has six times higher electron mobility than silicon, which allows...
    54 KB (2,517 words) - 15:26, 2 August 2024
  • Thumbnail for Diode
    diodes are made of silicon, but other semiconducting materials such as gallium arsenide and germanium are also used. The obsolete thermionic diode is a vacuum...
    63 KB (7,282 words) - 20:12, 14 August 2024
  • include silicon, gallium arsenide, and indium phosphide, while silicon / silicon-germanium alloys, aluminum gallium arsenide / gallium arsenide, and indium...
    6 KB (745 words) - 09:13, 29 June 2024
  • velocity with respect to the more common semiconductors silicon and gallium arsenide. It is used mainly in HEMT and HBT structures, but also for the fabrication...
    3 KB (343 words) - 16:45, 29 May 2024
  • Thumbnail for Czochralski method
    obtain single crystals of semiconductors (e.g. silicon, germanium and gallium arsenide), metals (e.g. palladium, platinum, silver, gold), salts and synthetic...
    15 KB (1,793 words) - 18:29, 6 August 2024
  • Thumbnail for Schottky junction solar cell
    power-conversion efficiency to 5.2%. Under the right conditions, a gallium arsenide cell can produce an efficiency of around 22%. This is considered an...
    7 KB (905 words) - 15:47, 1 December 2023
  • Thumbnail for Solar panel
    silicon (a-Si), cadmium telluride (CdTe), copper indium gallium selenide (CIGS), or gallium arsenide (GaAs). Solar cells made with newer, less established...
    74 KB (8,440 words) - 22:02, 14 August 2024
  • Thumbnail for Metal assisted chemical etching
    technology. The main application of black silicon is solar energy. Black Gallium Arsenide with light trapping properties have been also produced by MACE. Huang...
    18 KB (2,228 words) - 22:38, 10 December 2023
  • Gallium manganese arsenide, chemical formula (Ga,Mn)As is a magnetic semiconductor. It is based on the world's second most commonly used semiconductor...
    34 KB (3,585 words) - 09:20, 2 May 2024
  • metal arsenides gives arsine: Na3As + 3 H2O → AsH3 + 3 NaOH Many arsenides of the group 13 elements (group III) are valuable semiconductors. Gallium arsenide...
    7 KB (637 words) - 20:12, 8 September 2023
  • Thumbnail for Indium phosphide
    optoelectronic devices based other semiconductors, such as indium gallium arsenide. The devices include pseudomorphic heterojunction bipolar transistors...
    10 KB (754 words) - 16:21, 4 June 2024