Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. It has a face-centered cubic ("zincblende") crystal structure, identical...
10 KB (754 words) - 16:21, 4 June 2024
Indium gallium phosphide (InGaP), also called gallium indium phosphide (GaInP), is a semiconductor composed of indium, gallium and phosphorus. It is used...
3 KB (343 words) - 16:45, 29 May 2024
Aluminium gallium indium phosphide (AlGaInP, also AlInGaP, InGaAlP, etc.) is a semiconductor material that provides a platform for the development of multi-junction...
7 KB (672 words) - 06:29, 2 May 2024
of the lamp. Indium has many semiconductor-related applications. Some indium compounds, such as indium antimonide and indium phosphide, are semiconductors...
49 KB (5,844 words) - 14:48, 21 November 2024
Indium gallium arsenide phosphide (GaxIn1−xAsyP1−y) is a quaternary compound semiconductor material, an alloy of gallium arsenide, gallium phosphide, indium...
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photo-Dember emitter. Quantum dots can be formed in a monolayer of indium arsenide on indium phosphide or gallium arsenide. The mismatches of lattice constants...
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35 eV. Indium gallium arsenide (In0.53Ga0.47As) is lattice matched to Indium Phosphide with a band gap of 0.74 eV. A quaternary alloy of indium gallium...
61 KB (8,206 words) - 06:42, 9 November 2024
by simple diode structures using gallium antimonide (GaSb), GaAs, indium phosphide (InP), and silicon-germanium (SiGe) alloys at room temperature and...
159 KB (17,099 words) - 06:02, 15 November 2024
phosphine upon hydrolysis. Magnesium phosphide (Mg3P2) also is moisture sensitive. Indium phosphide (InP) and gallium phosphide (GaP) are used as a semi-conductors...
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arsenide, and indium phosphide, while silicon / silicon-germanium alloys, aluminum gallium arsenide / gallium arsenide, and indium phosphide / indium gallium...
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soluble equivalent to "P3−". Indium phosphide, a semiconductor arises by treating in-situ generated "sodium phosphide" with indium(III) chloride in hot N...
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heat-storage material. SiC was enveloped a semiconductor material made of indium, gallium and arsenic. At 1,435 °C (2,615 °F) the device radiates thermal...
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g. indium gallium arsenide (InGaAs)) and quaternary alloys (four elements) such as aluminium gallium indium phosphide (AlInGaP)) alloy and Indium arsenide...
54 KB (2,525 words) - 05:44, 8 October 2024
light-emitting diodes (e.g. aluminium gallium indium phosphide). Highly poisonous, aluminium phosphide has been used for suicide. Fumigation has also...
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arsenide Gallium indium arsenide antimonide phosphide Gallium phosphide Indium gallium arsenide phosphide Indium gallium phosphide Tadashige Sato and...
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silicon and germanium diodes, but in gallium arsenide phosphide (GaAsP) and gallium phosphide (GaP) semiconductors, the electrons dissipate energy by...
32 KB (3,317 words) - 16:57, 13 November 2024
is the precursor of indium-containing compounds such as the solar cell materials CuInS2 and indium phosphide quantum dots. Indium acetate can be prepared...
3 KB (178 words) - 14:55, 3 June 2023
Indium nitride (InN) is a small bandgap semiconductor material which has potential application in solar cells and high speed electronics. The bandgap of...
8 KB (670 words) - 18:27, 8 July 2023
Indium antimonide (InSb) is a crystalline compound made from the elements indium (In) and antimony (Sb). It is a narrow-gap semiconductor material from...
12 KB (993 words) - 23:50, 5 October 2024
Phosphine (redirect from Hydrogen phosphide)
semiconductors. Commercially significant products include gallium phosphide and indium phosphide. Phosphine is an attractive fumigant because it is lethal to...
39 KB (3,618 words) - 11:03, 15 November 2024
Indium arsenide antimonide phosphide (InAsSbP) is a semiconductor material. InAsSbP has been used as blocking layers for semiconductor laser structures...
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for Hall effect sensors: Gallium arsenide (GaAs) Indium arsenide (InAs) Indium phosphide (InP) Indium antimonide (InSb) Graphene Hall effect sensors may...
34 KB (3,875 words) - 15:23, 18 November 2024
commercially utilized material platforms for photonic integrated circuits is indium phosphide (InP), which allows for the integration of various optically active...
25 KB (2,846 words) - 06:51, 19 November 2024
is Ga0.47In0.53As, which can be deposited in single crystal form on indium phosphide (InP). GaInAs is not a naturally-occurring material. Single crystal...
30 KB (3,798 words) - 13:55, 5 October 2024
transistors have become common. Other III-V technologies, such as indium phosphide (InP), have been shown to offer superior performance to GaAs in terms...
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Pentoxide", Cobalt in Hard Metals and Cobalt Sulfate, Gallium Arsenide, Indium Phosphide and Vanadium Pentoxide (PDF), IARC Monographs on the Evaluation of...
17 KB (1,550 words) - 14:25, 4 October 2024
higher frequencies, compound semiconductors like gallium arsenide and indium phosphide) to obtain the desired transport of electronic charge and control of...
81 KB (8,277 words) - 13:54, 13 November 2024
Gallium phosphide (GaP), a phosphide of gallium, is a compound semiconductor material with an indirect band gap of 2.24 eV at room temperature. Impure...
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on sapphire, gallium nitride (GaN) on sapphire, aluminium gallium indium phosphide (AlGaInP) on gallium arsenide (GaAs) or diamond or iridium, and graphene...
30 KB (3,602 words) - 21:59, 16 November 2024
compound semiconductor processing, to etch Indium gallium arsenide selectively with respect to indium phosphide in microfabrication to etch silicon nitride...
27 KB (2,405 words) - 10:13, 13 October 2024