Ferroelectric RAM (FeRAM, F-RAM or FRAM) is a random-access memory similar in construction to DRAM but using a ferroelectric layer instead of a dielectric...
27 KB (3,200 words) - 03:39, 29 September 2024
Non-volatile memory (redirect from Parameter RAM)
programmable ROM) and EEPROM (electrically erasable programmable ROM), ferroelectric RAM, most types of computer data storage devices (e.g. disk storage, hard...
18 KB (1,929 words) - 00:26, 29 October 2024
Non-volatile random-access memory (redirect from NV-RAM)
system to enter widespread production is ferroelectric RAM, or F-RAM (sometimes referred to as FeRAM). F-RAM is a random-access memory similar in construction...
18 KB (2,392 words) - 16:01, 10 May 2024
are based on dielectric materials. Ferroelectric devices are used in digital electronics as part of ferroelectric RAM, or in analog electronics as tunable...
3 KB (432 words) - 03:55, 10 May 2023
capacitors are indeed used to make ferroelectric RAM for computers and RFID cards. In these applications thin films of ferroelectric materials are typically used...
32 KB (4,069 words) - 02:06, 11 November 2024
to DRAM to SRAM. An alternative memory ready for use is ferroelectric RAM (FRAM or FeRAM). FeRAM adds a small amount of a ferro-electric material to a DRAM...
18 KB (2,371 words) - 06:05, 15 August 2024
form of NOR flash, OTP ROM, or ferroelectric RAM is also often included on the chip, as well as a small amount of RAM. Microcontrollers are designed for...
43 KB (5,232 words) - 21:53, 8 November 2024
Random-access memory (redirect from Shadow ram)
Random-access memory (RAM; /ræm/) is a form of electronic computer memory that can be read and changed in any order, typically used to store working data...
58 KB (5,935 words) - 01:40, 16 November 2024
Ceramic (section Ferroelectricity and supersets)
necessary consequence of ferroelectricity. This can be used to store information in ferroelectric capacitors, elements of ferroelectric RAM. The most common such...
44 KB (5,243 words) - 22:32, 29 October 2024
Fe FET (redirect from Ferroelectric Field-Effect Transistor)
titanate (Bi4Ti3O12) ferroelectric, or Pb1−xLnxTiO3 (PLT) and related mixed zirconate/titanates (PLZT). In the late 1980 Ferroelectric RAM was developed, using...
6 KB (693 words) - 17:39, 21 September 2024
Fellow of the Royal Academy of Music in the University of London Ferroelectric RAM, a form of non-volatile random access memory Fleet Rehabilitation...
3 KB (374 words) - 12:55, 13 September 2024
(Ferroelectric RAM) – One type of nonvolatile RAM. Flash memory – In this type the writing process is intermediate in speed between EEPROMS and RAM memory;...
36 KB (3,606 words) - 03:17, 29 September 2024
similar system to enter widespread production is ferroelectric RAM, or F-RAM (sometimes referred to as FeRAM). Also seeing renewed interest are...
47 KB (5,352 words) - 10:41, 1 October 2024
commercial product to use ferroelectric RAM (FeRAM). The Memory Card's microcontroller (MCU) contains 32 Kib (4 KiB) embedded FeRAM manufactured by Toshiba...
23 KB (2,405 words) - 22:26, 7 November 2024
technologies under development include ferroelectric RAM, programmable metallization cell, Spin-transfer torque magnetic RAM, SONOS, resistive random-access...
29 KB (3,284 words) - 18:37, 1 October 2024
A Ferroelectric tunnel junction (FTJ) is a form of tunnel junction including a ferroelectric dielectric material sandwiched between two electrically conducting...
9 KB (1,199 words) - 06:42, 1 October 2024
millipede memory, Skyrmion, programmable metallization cell, ferroelectric RAM, magnetoresistive RAM, nvSRAM) In development Emerging magnetic data storage...
100 KB (4,190 words) - 18:21, 21 November 2024
Phase-change memory (redirect from Phase-change RAM)
where phase-change alloy is used as a storage part of a memory cell. Ferroelectric RAM (FRAM) Magnetoresistive random-access memory (MRAM) Read-mostly memory...
41 KB (4,693 words) - 17:13, 21 September 2024
Multiferroics (redirect from Magnetic ferroelectrics)
– a magnetisation that is switchable by an applied magnetic field ferroelectricity – an electric polarisation that is switchable by an applied electric...
74 KB (8,490 words) - 18:46, 2 November 2024
Magnetic-core memory (redirect from Ferrite ram)
angle Bubble memory Core dump Core rope memory Delay-line memory Ferroelectric RAM Magnetoresistive random-access memory Read-mostly memory (RMM) Thin-film...
41 KB (5,528 words) - 17:07, 3 October 2024
accelerometers, gyroscopes actuators, tunable optics, micro pumps, ferroelectric RAM, display systems and smart roads, when energy sources are limited...
62 KB (7,453 words) - 20:28, 3 August 2024
NvSRAM (category Types of RAM)
nvSRAM BBSRAM Ferroelectric RAM Magnetoresistive random-access memory Technique Has non-volatile elements along with high performance SRAM Has a lithium...
8 KB (741 words) - 22:34, 29 May 2024
2-transistor/2-resistive-storage (2T-2R) cells. A design of TCAM using hybrid Ferroelectric FeFET was recently published by a group of International scientists...
14 KB (1,603 words) - 18:46, 15 November 2024
Resistive random-access memory (redirect from Resistive RAM)
Resistive random-access memory (ReRAM or RRAM) is a type of non-volatile (NV) random-access (RAM) computer memory that works by changing the resistance...
53 KB (6,197 words) - 10:31, 6 October 2024
magnetoresistive random-access memory (MRAM), phase-change memory (PCRAM) and ferroelectric RAM (FeRAM). Most of these technologies offer densities similar to flash memory...
16 KB (1,803 words) - 17:29, 21 September 2024
mechanisms responsible for plasticity. Experimental systems based on ferroelectric tunnel junctions have been used to show that STDP can be harnessed from...
34 KB (3,974 words) - 09:18, 25 October 2024
chips that incorporate thin ferroelectric memory devices. In 1984 he co-founded Symetrix Corporation to develop ferroelectric RAM (FRAM), which licensed its...
8 KB (532 words) - 09:06, 5 January 2024
Memristor (section Ferroelectric memristor)
elucidated in an article in nature nanotechnology. The ferroelectric memristor is based on a thin ferroelectric barrier sandwiched between two metallic electrodes...
115 KB (13,751 words) - 18:34, 6 October 2024
of them are associated with nanotechnology, particularly a ferroelectric memory chip (FeRAM) As a professor of electrical and computer engineering at the...
5 KB (465 words) - 17:12, 4 September 2024
of a microscope probe scanned along a ferroelectric surface is used to study the domain structure of ferroelectric materials. Another example of voltage...
122 KB (15,170 words) - 17:48, 31 October 2024