• A MESFET (metal–semiconductor field-effect transistor) is a field-effect transistor semiconductor device similar to a JFET with a Schottky (metal–semiconductor)...
    4 KB (457 words) - 23:46, 9 August 2023
  • Thumbnail for Carver Mead
    phones. Carver's work on MESFETs also became the basis for the later development of HEMTs by Fujitsu in 1980. HEMTs, like MESFETs, are accumulation-mode...
    45 KB (4,356 words) - 00:04, 15 August 2024
  • Thumbnail for Transistor
    Julius Edgar Lilienfeld when he filed a patent for a device similar to MESFET in 1926, and for an insulated-gate field-effect transistor in 1928. The...
    95 KB (9,899 words) - 05:04, 4 August 2024
  • PhD thesis in Electrical & Electronic Engineering in 1995, entitled GaAs MESFET Photodetectors for Imaging Arrays, under Kamran Eshraghian and Bruce R....
    15 KB (1,412 words) - 23:06, 1 May 2024
  • Thumbnail for Organic field-effect transistor
    1. They are MOSFET (metal–oxide–semiconductor field-effect transistor), MESFET (metal–semiconductor field-effect transistor) and TFT (thin-film transistor)...
    25 KB (3,150 words) - 19:40, 5 June 2024
  • Thumbnail for Depletion and enhancement modes
    voltages: JFET, poly-silicon MOSFET, double-gate MOSFET, metal-gate MOSFET, MESFET.   Depletion   Electrons   Holes   Metal   Insulator Top: source, bottom:...
    8 KB (842 words) - 16:53, 28 March 2024
  • bipolar transistor (HBT) ~50 GHz Metal–semiconductor field-effect transistor (MESFET) ~100 GHz Gunn diode, fundamental mode ~100 GHz Magnetron tube ~100 GHz...
    61 KB (6,624 words) - 03:31, 31 July 2024
  • Thumbnail for Electronic component
    transistor) – N-channel or P-channel SIT (static induction transistor) MESFET (metal semiconductor FET) HEMT (high-electron-mobility transistor) Composite...
    25 KB (2,725 words) - 09:30, 15 August 2024
  • Micropower, Inc. The company's proprietary technology enables high voltage Si-MESFET transistors to be fabricated on commercial SOI CMOS processes without altering...
    7 KB (659 words) - 12:01, 18 March 2023
  • Thumbnail for Microwave
    transistors, and it has dominated microwave semiconductors ever since. MESFETs (metal-semiconductor field-effect transistors), fast GaAs field effect...
    67 KB (6,965 words) - 22:04, 6 August 2024
  • leadership in the development of self-aligned refractory-gate gallium arsenide MESFET integrated circuits." He was elected an IEEE Fellow in 2000, Fellow of the...
    3 KB (217 words) - 04:30, 31 July 2024
  • Thumbnail for Schottky barrier
    Advanced Schottky TTL families, as well as their low power variants. A MESFET or metal–semiconductor FET uses a reverse-biased Schottky barrier to provide...
    16 KB (2,091 words) - 15:43, 10 November 2023
  • and physical resistor models GaAs MESFET models, includes latest versions of GaAs, TOM2, TOM3, and Angelov GaN MESFET models, including Angelov, ASM, and...
    3 KB (438 words) - 12:12, 8 August 2024
  • Thumbnail for JFET
    y_{\text{fs}}} (for transadmittance). Constant-current diode Fetron MOSFET MESFET Hall, John. "Discrete JFET" (PDF). linearsystems.com. Archived (PDF) from...
    20 KB (2,415 words) - 14:30, 7 June 2024
  • Thumbnail for Gallium nitride
    first gallium nitride metal semiconductor field-effect transistors (GaN MESFET) were experimentally demonstrated in 1993 and they are being actively developed...
    38 KB (3,738 words) - 09:42, 9 August 2024
  • Thumbnail for Field-effect transistor
    depleted wide-band-gap material forms the isolation between gate and body. The MESFET (metal–semiconductor field-effect transistor) substitutes the p–n junction...
    49 KB (5,970 words) - 03:36, 31 July 2024
  • Bangalore 1996 150 1000–500 CMOS GAETEC GaAs India, Hyderabad 1996 150 700–500 MESFET BAE Systems (formerly Sanders) United States, New Hampshire, Nashua 1985...
    207 KB (6,812 words) - 04:14, 31 July 2024
  • Thumbnail for John Bardeen
    been anticipated and patented in 1930 by Julius Lilienfeld, who filed his MESFET-like patent in Canada on October 22, 1925. Shockley publicly took the lion's...
    44 KB (4,707 words) - 22:09, 27 July 2024
  • Thumbnail for Gallium arsenide
    various transistor types: Metal–semiconductor field-effect transistor (MESFET) High-electron-mobility transistor (HEMT) Junction field-effect transistor...
    46 KB (5,183 words) - 09:13, 2 May 2024
  • Thumbnail for Active electronically scanned array
    only a few cubic centimeters in volume. The introduction of JFETs and MESFETs did the same to the transmitter side of the systems as well. It gave rise...
    44 KB (5,305 words) - 16:13, 31 July 2024
  • digital-to-analog converters. High-electron-mobility transistor (HEMT) MESFET W. Shockley: 'Circuit Element Utilizing Semiconductive Material', United...
    6 KB (745 words) - 09:13, 29 June 2024
  • single IC. The first gallium-arsenide Schottky-gate field-effect transistor (MESFET) was made by Carver Mead and reported in 1966. The first report of a floating-gate...
    64 KB (7,318 words) - 03:48, 31 July 2024
  • Thumbnail for Field effect (semiconductor)
    diode and of field-effect transistors, notably the MOSFET, the JFET and the MESFET. The change in surface conductance occurs because the applied field alters...
    7 KB (985 words) - 01:47, 7 January 2023
  • Thumbnail for Quite Universal Circuit Simulator
    HICUM L0 v1.12 HICUM L0 v1.2 HICUM L2 v2.1 HICUM L2 v2.22 HICUM L2 v2.23 MESFET (Curtice, Statz, TOM-1 and TOM-2) SGP (SPICE Gummel-Poon) MOSFET JFET EPFL-EKV...
    8 KB (801 words) - 05:26, 13 January 2024
  • Thumbnail for Gallium
    arsenide), such as the manufacture of ultra-high-speed logic chips and MESFETs for low-noise microwave preamplifiers in cell phones. About 20% of this...
    74 KB (8,761 words) - 13:06, 13 August 2024
  • Thumbnail for Monolithic microwave integrated circuit
    Originally, MMICs used metal-semiconductor field-effect transistors (MESFETs) as the active device. More recently high-electron-mobility transistor...
    4 KB (430 words) - 01:39, 16 April 2024
  • AlGaAs/GaAs Heterojunction Bipolar Transistor (HBT) and BiFET (Planar HBT/MESFET) integrated circuits technologies from the research laboratory to the production...
    7 KB (619 words) - 04:22, 31 July 2024
  • Thumbnail for William Shockley
    devices based on it patented in 1930 by Julius Lilienfeld, who filed his MESFET-like patent in Canada on October 22, 1925. Although the patent appeared...
    67 KB (7,077 words) - 23:14, 15 August 2024
  • Thumbnail for Ngspice
    devices like diodes, bipolar transistors, MOSFETs (both bulk and SOI), MESFETs, JFETs and HFETs. Ngspice supports parametric netlists (i.e. netlists can...
    10 KB (962 words) - 04:56, 25 June 2024
  • linearity, complexity and size, while also having expertise in older GaAs MESFET and silicon polar transistor process technology. To strengthen its position...
    31 KB (2,831 words) - 20:51, 30 July 2024