Ferroelectric RAM (FeRAM, F-RAM or FRAM) is a random-access memory similar in construction to DRAM but using a ferroelectric layer instead of a dielectric...
25 KB (2,983 words) - 22:07, 11 May 2024
Random-access memory (RAM; /ræm/) is a form of electronic computer memory that can be read and changed in any order, typically used to store working data...
57 KB (5,724 words) - 15:04, 19 June 2024
Non-volatile random-access memory (NVRAM) is random-access memory that retains data without applied power. This is in contrast to dynamic random-access memory (DRAM)...
18 KB (2,392 words) - 16:01, 10 May 2024
higher capacity for the same-size silicon. Ferroelectric RAM (FeRAM, F-RAM or FRAM) is a form of random-access memory similar in construction to DRAM, both...
18 KB (1,920 words) - 03:59, 13 June 2024
Resistive random-access memory (ReRAM or RRAM) is a type of non-volatile (NV) random-access (RAM) computer memory that works by changing the resistance...
52 KB (6,178 words) - 14:17, 29 June 2024
updated. NVRAM (Non-volatile random-access memory) FRAM (Ferroelectric RAM) – One type of nonvolatile RAM. Flash memory – In this type the writing process...
36 KB (3,551 words) - 19:50, 27 December 2023
obsolete) racetrack memory (currently experimental) ferroelectric random-access memory (FRAM) (in development and production) phase-change memory (PCM) programmable...
4 KB (508 words) - 12:37, 10 June 2024
Magnetoresistive RAM (redirect from Magnetic Random Access Memory)
Magnetoresistive random-access memory (MRAM) is a type of non-volatile random-access memory which stores data in magnetic domains. Developed in the mid-1980s...
46 KB (5,286 words) - 21:14, 6 May 2024
Fe FET (redirect from Ferroelectric Field-Effect Transistor)
no. 131, Springer Ishiwara, Hiroshi (2012), "FeFET and ferroelectric random access memories", Multifunctional Oxide Heterostructures, pp. 340–363, doi:10...
6 KB (689 words) - 06:23, 1 June 2023
Examples of volatile memory are dynamic random-access memory (DRAM) used for primary storage and static random-access memory (SRAM) used mainly for...
29 KB (3,272 words) - 22:07, 15 July 2024
Xpoint memory where phase-change alloy is used as a storage part of a memory cell. Ferroelectric RAM (FRAM) Magnetoresistive random-access memory (MRAM)...
41 KB (4,672 words) - 16:49, 23 April 2024
integrating ferroelectric polymer Langmuir–Blodgett (LB) films with semiconductor technology to produce nonvolatile ferroelectric random-access memory and data-storage...
17 KB (2,029 words) - 05:13, 24 June 2024
TiN, TaN, WN) for Cu interconnect barriers noble metals for ferroelectric random access memory (FRAM) and DRAM capacitor electrodes high- and low-work function...
65 KB (7,388 words) - 23:29, 2 July 2024
NvSRAM (redirect from Battery-backed memory)
nvSRAM is a type of non-volatile random-access memory (NVRAM). nvSRAM extends the functionality of basic SRAM by adding non-volatile storage such as an...
8 KB (741 words) - 22:34, 29 May 2024
magnetic-core memory is a form of random-access memory. It predominated for roughly 20 years between 1955 and 1975, and is often just called core memory, or, informally...
40 KB (5,337 words) - 17:07, 10 July 2024
recognition unit. Unlike standard computer memory, random-access memory (RAM), in which the user supplies a memory address and the RAM returns the data word...
14 KB (1,603 words) - 05:22, 30 April 2024
universal memory device applicable to a wide variety of roles. Other contenders included magnetoresistive random-access memory (MRAM), phase-change memory (PCRAM)...
15 KB (1,775 words) - 11:19, 31 May 2024
Memristor (redirect from Memory resistor)
aims at a real physical modeling of non-volatile memory elements, e.g., resistive random-access memory devices, one has to keep an eye on the aforementioned...
114 KB (13,866 words) - 08:01, 6 June 2024
Nano-RAM (category Non-volatile random-access memory)
Nano-RAM is a proprietary computer memory technology from the company Nantero. It is a type of nonvolatile random-access memory based on the position of carbon...
18 KB (2,363 words) - 00:12, 10 June 2024
numerous solids, and the physics of oxide devices such as ferroelectric random access memory (FeRAM), resistance RAM (RRAM), and spintronic devices. He...
16 KB (1,378 words) - 08:27, 10 June 2024
Germanium telluride (category Ferroelectric materials)
component of chalcogenide glass. It shows semimetallic conduction and ferroelectric behaviour. Germanium telluride exists in three major crystalline forms...
11 KB (1,079 words) - 23:32, 8 July 2024
University of London Ferroelectric RAM, electronic device using the ferroelectric effect to produce low density random access memory Flight Releasable Attachment...
3 KB (365 words) - 05:15, 4 February 2024
principle to design on/off switches for their proposed nanotube Random Access Memory devices. They used carbon nanotube bundles of ≈50 nm in diameter...
12 KB (1,652 words) - 18:40, 26 April 2024
Whirlwind I (category Magnetic-core memory computers)
design called for 2048 (2K) words of 16 bits each of random-access storage. The only two available memory technologies in 1949 that could hold this much data...
30 KB (3,682 words) - 09:45, 25 May 2024
commonly manufactured capacitors are integrated into dynamic random-access memory, flash memory, and other device chips, this article covers the discrete...
133 KB (12,948 words) - 01:26, 7 July 2024
occurs through two channels of DRDRAM (Direct Rambus Dynamic Random Access Memory) and the memory controller, which interfaces to the internal data bus. Each...
16 KB (1,987 words) - 00:16, 19 June 2024
Kashiwagi. Development of high-reliability technologies for ferroelectric random access memory and its mass-production. 2015 - Hidefumi Ibe, Tadanobu Toba...
11 KB (1,304 words) - 19:00, 10 January 2024
List of MOSFET applications (section MOS memory)
code storage, embedded logic, embedded memory, main memory Memory registers – shift register Random-access memory (RAM) – static RAM (SRAM), dynamic RAM...
174 KB (14,390 words) - 00:53, 28 May 2024
Capacitor (section Digital memory)
capacitor in memory chips, and as the basic building block of the charge-coupled device (CCD) in image sensor technology. In dynamic random-access memory (DRAM)...
123 KB (15,219 words) - 18:58, 11 July 2024
gates in a "latch" circuit. Latching circuitry is used in static random-access memory. More complicated designs that use clock signals and that change...
39 KB (3,459 words) - 17:20, 27 May 2024