• Thumbnail for Ferroelectric RAM
    Ferroelectric RAM (FeRAM, F-RAM or FRAM) is a random-access memory similar in construction to DRAM but using a ferroelectric layer instead of a dielectric...
    25 KB (2,983 words) - 22:07, 11 May 2024
  • Thumbnail for Random-access memory
    Random-access memory (RAM; /ræm/) is a form of electronic computer memory that can be read and changed in any order, typically used to store working data...
    57 KB (5,724 words) - 15:04, 19 June 2024
  • Non-volatile random-access memory (NVRAM) is random-access memory that retains data without applied power. This is in contrast to dynamic random-access memory (DRAM)...
    18 KB (2,392 words) - 16:01, 10 May 2024
  • higher capacity for the same-size silicon. Ferroelectric RAM (FeRAM, F-RAM or FRAM) is a form of random-access memory similar in construction to DRAM, both...
    18 KB (1,920 words) - 03:59, 13 June 2024
  • Resistive random-access memory (ReRAM or RRAM) is a type of non-volatile (NV) random-access (RAM) computer memory that works by changing the resistance...
    52 KB (6,178 words) - 14:17, 29 June 2024
  • updated. NVRAM (Non-volatile random-access memory) FRAM (Ferroelectric RAM) – One type of nonvolatile RAM. Flash memory – In this type the writing process...
    36 KB (3,551 words) - 19:50, 27 December 2023
  • obsolete) racetrack memory (currently experimental) ferroelectric random-access memory (FRAM) (in development and production) phase-change memory (PCM) programmable...
    4 KB (508 words) - 12:37, 10 June 2024
  • Magnetoresistive random-access memory (MRAM) is a type of non-volatile random-access memory which stores data in magnetic domains. Developed in the mid-1980s...
    46 KB (5,286 words) - 21:14, 6 May 2024
  • no. 131, Springer Ishiwara, Hiroshi (2012), "FeFET and ferroelectric random access memories", Multifunctional Oxide Heterostructures, pp. 340–363, doi:10...
    6 KB (689 words) - 06:23, 1 June 2023
  • Thumbnail for Computer memory
    Examples of volatile memory are dynamic random-access memory (DRAM) used for primary storage and static random-access memory (SRAM) used mainly for...
    29 KB (3,272 words) - 22:07, 15 July 2024
  • Xpoint memory where phase-change alloy is used as a storage part of a memory cell. Ferroelectric RAM (FRAM) Magnetoresistive random-access memory (MRAM)...
    41 KB (4,672 words) - 16:49, 23 April 2024
  • Thumbnail for Ferroelectric polymer
    integrating ferroelectric polymer Langmuir–Blodgett (LB) films with semiconductor technology to produce nonvolatile ferroelectric random-access memory and data-storage...
    17 KB (2,029 words) - 05:13, 24 June 2024
  • TiN, TaN, WN) for Cu interconnect barriers noble metals for ferroelectric random access memory (FRAM) and DRAM capacitor electrodes high- and low-work function...
    65 KB (7,388 words) - 23:29, 2 July 2024
  • Thumbnail for NvSRAM
    NvSRAM (redirect from Battery-backed memory)
    nvSRAM is a type of non-volatile random-access memory (NVRAM). nvSRAM extends the functionality of basic SRAM by adding non-volatile storage such as an...
    8 KB (741 words) - 22:34, 29 May 2024
  • Thumbnail for Magnetic-core memory
    magnetic-core memory is a form of random-access memory. It predominated for roughly 20 years between 1955 and 1975, and is often just called core memory, or, informally...
    40 KB (5,337 words) - 17:07, 10 July 2024
  • Thumbnail for Content-addressable memory
    recognition unit. Unlike standard computer memory, random-access memory (RAM), in which the user supplies a memory address and the RAM returns the data word...
    14 KB (1,603 words) - 05:22, 30 April 2024
  • universal memory device applicable to a wide variety of roles. Other contenders included magnetoresistive random-access memory (MRAM), phase-change memory (PCRAM)...
    15 KB (1,775 words) - 11:19, 31 May 2024
  • Thumbnail for Memristor
    Memristor (redirect from Memory resistor)
    aims at a real physical modeling of non-volatile memory elements, e.g., resistive random-access memory devices, one has to keep an eye on the aforementioned...
    114 KB (13,866 words) - 08:01, 6 June 2024
  • Nano-RAM (category Non-volatile random-access memory)
    Nano-RAM is a proprietary computer memory technology from the company Nantero. It is a type of nonvolatile random-access memory based on the position of carbon...
    18 KB (2,363 words) - 00:12, 10 June 2024
  • Thumbnail for Noh Tae-won
    numerous solids, and the physics of oxide devices such as ferroelectric random access memory (FeRAM), resistance RAM (RRAM), and spintronic devices. He...
    16 KB (1,378 words) - 08:27, 10 June 2024
  • Thumbnail for Germanium telluride
    Germanium telluride (category Ferroelectric materials)
    component of chalcogenide glass. It shows semimetallic conduction and ferroelectric behaviour. Germanium telluride exists in three major crystalline forms...
    11 KB (1,079 words) - 23:32, 8 July 2024
  • University of London Ferroelectric RAM, electronic device using the ferroelectric effect to produce low density random access memory Flight Releasable Attachment...
    3 KB (365 words) - 05:15, 4 February 2024
  • principle to design on/off switches for their proposed nanotube Random Access Memory devices. They used carbon nanotube bundles of ≈50 nm in diameter...
    12 KB (1,652 words) - 18:40, 26 April 2024
  • Thumbnail for Whirlwind I
    Whirlwind I (category Magnetic-core memory computers)
    design called for 2048 (2K) words of 16 bits each of random-access storage. The only two available memory technologies in 1949 that could hold this much data...
    30 KB (3,682 words) - 09:45, 25 May 2024
  • Thumbnail for Capacitor types
    commonly manufactured capacitors are integrated into dynamic random-access memory, flash memory, and other device chips, this article covers the discrete...
    133 KB (12,948 words) - 01:26, 7 July 2024
  • Thumbnail for Emotion Engine
    occurs through two channels of DRDRAM (Direct Rambus Dynamic Random Access Memory) and the memory controller, which interfaces to the internal data bus. Each...
    16 KB (1,987 words) - 00:16, 19 June 2024
  • Kashiwagi. Development of high-reliability technologies for ferroelectric random access memory and its mass-production. 2015 - Hidefumi Ibe, Tadanobu Toba...
    11 KB (1,304 words) - 19:00, 10 January 2024
  • Thumbnail for List of MOSFET applications
    code storage, embedded logic, embedded memory, main memory Memory registers – shift register Random-access memory (RAM) – static RAM (SRAM), dynamic RAM...
    174 KB (14,390 words) - 00:53, 28 May 2024
  • Thumbnail for Capacitor
    capacitor in memory chips, and as the basic building block of the charge-coupled device (CCD) in image sensor technology. In dynamic random-access memory (DRAM)...
    123 KB (15,219 words) - 18:58, 11 July 2024
  • Thumbnail for Logic gate
    gates in a "latch" circuit. Latching circuitry is used in static random-access memory. More complicated designs that use clock signals and that change...
    39 KB (3,459 words) - 17:20, 27 May 2024