French
DeutschNickel monosilicide
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| Identifiers | |
|---|---|
3D model (JSmol) | |
| ChemSpider | |
PubChem CID | |
CompTox Dashboard (EPA) | |
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| Properties | |
| NiSi | |
| Molar mass | 86.778 g/mol |
| Melting point | 1,000 °C; 1,832 °F; 1,273 K[2] |
| −0.3×10−6 emu/g[1] | |
| Structure[3] | |
| Orthorhombic, oP8 | |
| Pnma, No. 62 | |
a = 0.519 nm, b = 0.333 nm, c = 0.5628 nm | |
Formula units (Z) | 4 |
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa). | |
Nickel monosilicide is an intermetallic compound formed out of nickel and silicon. Like other nickel silicides, NiSi is of importance in the area of microelectronics.
Preparation
[edit]Nickel monosilicide can be prepared by depositing a nickel layer on silicon and subsequent annealing. In the case of Ni films with thicknesses above 4 nm, the normal phase transition is given by Ni2Si at 250 °C followed by NiSi at 350 °C and NiSi2 at approximately 800 °C.[4] For films with an initial Ni thickness below 4 nm a direct transition from orthorhombic Ni2Si to epitaxial NiSi2−x, skipping the nickel monosilicide phase, is observed.[5]
Uses
[edit]Several properties make NiSi an important local contact material in the area of microelectronics, among them a reduced thermal budget, low resistivity of 13–14 μΩ·cm and a reduced Si consumption when compared to alternative compounds.[6]
References
[edit]- ^ Shinoda, Daizaburo; Asanabe, Sizuo (1966). "Magnetic Properties of Silicides of Iron Group Transition Elements". Journal of the Physical Society of Japan. 21 (3): 555. Bibcode:1966JPSJ...21..555S. doi:10.1143/JPSJ.21.555.
- ^ Gas, P.; d’Heurle, F. M. (1998). "Diffusion in silicides". In Beke, D. L. (ed.). Landolt-Börnstein - Group III Condensed Matter. Vol. 33A. Springer. pp. 1–38. doi:10.1007/10426818_13. ISBN 3-540-60964-4.
- ^ Wopersnow W., Schubert K. (1976) Z. Metallkd., 67, 807–810
- ^ d'Heurle, F. M.; Gas, P. (February 1986). "Kinetics of formation of silicides: A review". Journal of Materials Research. 1 (1): 205–221. Bibcode:1986JMatR...1..205D. doi:10.1557/JMR.1986.0205. S2CID 135724287.
- ^ Wolf, Philipp M.; Pitthan, Eduardo; Zhang, Zhen; Lavoie, Christian; Tran, Tuan T.; Primetzhofer, Daniel (2022-02-21). "Direct Transition from Ultrathin Orthorhombic Dinickel Silicides to Epitaxial Nickel Disilicide Revealed by In Situ Synthesis and Analysis". Small. 18 (14): 2106093. doi:10.1002/smll.202106093. ISSN 1613-6810. PMID 35191181. S2CID 247023770.
- ^ Lavoie, C.; d’Heurle, F.M.; Detavernier, C.; Cabral, C. (November 2003). "Towards implementation of a nickel silicide process for CMOS technologies". Microelectronic Engineering. 70 (2–4): 144–157. doi:10.1016/S0167-9317(03)00380-0.
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